DS1230W-100+
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- Mfr.Part #
- DS1230W-100+
- Manufacturer
- Analog Devices, Inc.
- Package / Case
- 28-DIP Module (0.600, 15.24mm)
- Datasheet
- Download
- Description
- IC NVSRAM 256KBIT PAR 28EDIP
- Stock
- 22
- In Stock ：
- 22
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- Manufacturer :
- Analog Devices, Inc.
- Product Category :
- Memory
- Terminal Finish :
- MATTE TIN
- Number of Functions :
- 1
- Standby Current-Max :
- 0.00025A
- Memory Size :
- 256Kb 32K x 8
- Terminal Pitch :
- 2.54mm
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 28
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Through Hole
- Memory Type :
- Non-Volatile
- Number of Terminations :
- 28
- Supply Current-Max :
- 0.05mA
- Width :
- 15.24mm
- Package / Case :
- 28-DIP Module (0.600, 15.24mm)
- Power Supplies :
- 3.3V
- Operating Mode :
- ASYNCHRONOUS
- Surface Mount :
- No
- Height Seated (Max) :
- 10.668mm
- Write Cycle Time - Word, Page :
- 100ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Memory Interface :
- Parallel
- Base Part Number :
- DS1230W
- Supply Voltage-Max (Vsup) :
- 3.6V
- Length :
- 38.225mm
- Operating Temperature :
- 0°C~70°C TA
- Organization :
- 256KX8
- HTS Code :
- 8473.30.11.40
- Terminal Position :
- Dual
- Supply Voltage-Min (Vsup) :
- 3V
- Memory Density :
- 2097152 bit
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- Additional Feature :
- 10 YEAR DATA RETENTION
- Memory Format :
- NVSRAM
- Pin Count :
- 28
- Voltage - Supply :
- 3V~3.6V
- JESD-609 Code :
- e3
- Access Time (Max) :
- 100 ns
- Memory Width :
- 8
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 6 Weeks
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Published :
- 2004
- Supply Voltage :
- 3.3V
- Datasheets
- DS1230W-100+
[Memory Analog Devices, Inc. DS1230W-100+] Overview
Introducing the cutting-edge Memory solution from Analog Devices, Inc., the DS1230W-100+. Engineered to redefine performance benchmarks, this IC NVSRAM 256KBIT PAR 28EDIP stands at the forefront of innovation in integrated circuits. Designed for unparalleled reliability and efficiency, it offers a seamless blend of advanced technology and robust construction, making it the preferred choice for discerning professionals.
With its 256KBIT capacity and PAR 28EDIP packaging, the DS1230W-100+ sets a new standard in memory solutions, catering to the diverse needs of modern industries. Whether it's data storage, system backup, or real-time processing, this versatile component delivers exceptional performance, ensuring optimal functionality in critical applications.
DS1230W-100+ Features
- Highly reliable IC NVSRAM
- 256KBIT capacity for ample data storage
- PAR 28EDIP packaging for easy integration
- Advanced technology for enhanced performance
- Robust construction for durability
- Low power consumption for efficiency
DS1230W-100+ Applications
- Data storage systems: The DS1230W-100+ excels in data storage applications, providing reliable and efficient memory solutions for servers, workstations, and network appliances. Its high capacity and fast access times ensure seamless operation in demanding environments, ensuring uninterrupted data access and integrity.
- Embedded systems: Integrated into embedded systems, the DS1230W-100+ serves as a vital component for system backup and real-time data processing. Its compact form factor and low power consumption make it ideal for space-constrained applications, such as industrial automation, automotive electronics, and medical devices.
- Communication devices: In communication devices, the DS1230W-100+ facilitates smooth operation and data management, enabling reliable communication protocols and network connectivity. From routers and switches to telecommunication equipment, this memory solution plays a crucial role in maintaining system stability and performance.
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