DPBT8105-7
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- Mfr.Part #
- DPBT8105-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A SOT23-3
- Stock
- 401
- In Stock ：
- 401
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Weight :
- 7.994566mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2017
- Frequency :
- 150MHz
- Length :
- 3mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 5V
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- -600mV
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lead Free :
- Lead Free
- Width :
- 1.4mm
- Power Dissipation :
- 300mW
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Base Part Number :
- DPBT8105
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 300mW
- Collector Base Voltage (VCBO) :
- 80V
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- -60V
- Transition Frequency :
- 150MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 60V
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 60V
- Power - Max :
- 600mW
- Factory Lead Time :
- 19 Weeks
- Number of Terminations :
- 3
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Current Rating :
- -1A
- Transistor Application :
- SWITCHING
- Height :
- 1mm
- Polarity/Channel Type :
- PNP
- Terminal Finish :
- Matte Tin (Sn)
- Max Breakdown Voltage :
- 60V
- Additional Feature :
- High Reliability
- Max Collector Current :
- 1A
- Gain Bandwidth Product :
- 150MHz
- Datasheets
- DPBT8105-7
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DPBT8105-7 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.
DPBT8105-7 Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz
DPBT8105-7 Applications
There are a lot of Diodes Incorporated
DPBT8105-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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