DMB53D0UV-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Special Purpose

Configuration :

SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE

DC Current Gain-Min (hFE) :

200

Drain to Source Voltage (Vdss) :

50V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Gate to Source Voltage (Vgs) :

12V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Dual

Package / Case :

SOT-563, SOT-666

Number of Pins :

6

Polarity :

NPN

Current Rating (Amps) :

100mA PNP 160mA N-Channel

Published :

2011

Pin Count :

6

JESD-609 Code :

e3

Voltage - Rated :

45V NPN 50V N-Channel

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Transistor Type :

NPN, N-Channel

Packaging :

Tape and Reel (TR)

Drain to Source Resistance :

3.1Ohm

Factory Lead Time :

12 Weeks

Radiation Hardening :

No

VCEsat-Max :

0.3 V

Transistor Application :

SWITCHING

Number of Elements :

1

Max Power Dissipation :

250mW

Current Rating :

160mA

Applications :

GENERAL PURPOSE

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

160mA

Number of Channels :

1

Additional Feature :

High Reliability

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Weight :

3.005049mg

ECCN Code :

EAR99

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes