DGD2181MS8-13

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Mfr.Part #
DGD2181MS8-13
Manufacturer
Diodes Incorporated
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
IC GATE DRVR HALF-BRIDGE 8SO
Stock
6,644
In Stock :
6,644

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Manufacturer :
Diodes Incorporated
Product Category :
Gate Drivers
Gate Type :
IGBT, N-Channel MOSFET
Peak Reflow Temperature (Cel) :
260
Factory Lead Time :
22 Weeks
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Operating Temperature :
150°C TJ
Input Type :
Non-Inverting
Mounting Type :
Surface Mount
Channel Type :
Independent
Terminal Finish :
Matte Tin (Sn)
Current - Peak Output (Source, Sink) :
1.9A 2.3A
Time@Peak Reflow Temperature-Max (s) :
30
Rise / Fall Time (Typ) :
40ns 20ns
Driven Configuration :
Half-Bridge
High Side Voltage - Max (Bootstrap) :
600V
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Number of Drivers :
2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tape and Reel (TR)
Logic Voltage - VIL, VIH :
0.8V 2.5V
Voltage - Supply :
10V~20V
Datasheets
DGD2181MS8-13
Introducing Gate Drivers Diodes Incorporated DGD2181MS8-13 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Package / Case:8-SOIC (0.154, 3.90mm Width), DGD2181MS8-13 pinout, DGD2181MS8-13 datasheet PDF, DGD2181MS8-13 amp .Beyond Gate Drivers Diodes Incorporated DGD2181MS8-13 ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DGD2181MS8-13


Gate Drivers Diodes Incorporated DGD2181MS8-13 Overview

The Gate Drivers Diodes Incorporated DGD2181MS8-13 is a high-performance, half-bridge gate driver designed to address the stringent demands of modern power management systems. This compact 8SO integrated circuit ensures reliable and efficient driving of MOSFETs and IGBTs, making it an ideal choice for developers looking to enhance system performance while reducing power consumption and heat generation. By integrating features like under-voltage lockout and robust output drive capabilities, the DGD2181MS8-13 excels in delivering precise control, making it an essential component for high-efficiency applications.

DGD2181MS8-13 Features

This integrated circuit boasts a range of features designed to optimize performance and safety in various applications. Key features include strong sink and source drive capabilities, under-voltage lockout for both channels, and a wide operating voltage range. Additionally, its advanced level-shifting technology ensures effective MOSFET or IGBT operation at high voltages, which is crucial for achieving low power dissipation and improved energy efficiency.

DGD2181MS8-13 Applications

  • Electric Vehicles: Utilized in the drive systems of electric vehicles to manage power efficiently and improve the reliability of motor controllers.
  • Renewable Energy Systems: Key component in solar inverters and wind turbine converters, facilitating enhanced power conversion efficiency and robustness in various environmental conditions.
  • DC/DC Converters: Enhances the performance and stability of DC/DC converters used in server farms and telecom infrastructure by ensuring efficient gate driving and system reliability.
  • Uninterruptible Power Supplies (UPS): Critical for maintaining consistent operation in UPS systems, ensuring safe and efficient gate switching to prevent power interruptions.
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