DE475-102N21A
- Mfr.Part #
- DE475-102N21A
- Manufacturer
- Littelfuse
- Package / Case
- 6-SMD, Flat Lead Exposed Pad
- Datasheet
- Download
- Description
- RF MOSFET N-CHANNEL DE475
- Stock
- 9,866
- In Stock :
- 9,866
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Power - Output :
- 1800W
- RoHS Status :
- RoHS Compliant
- Gain :
- -
- Manufacturer :
- IXYS Corporation
- Product Status :
- Obsolete
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Maximum Continuous Drain Current (A) :
- 24
- HTS :
- 8541.29.00.95
- Maximum Drain Source Voltage (V) :
- 1000
- Typical Reverse Transfer Capacitance @ Vds (pF) :
- 52@800V
- Reach Compliance Code :
- Compliant
- Package Width :
- 23.24
- Typical Turn-On Delay Time (ns) :
- 5
- Voltage - Rated :
- 1000 V
- Package Length :
- 21.08
- Typical Gate Charge @ Vgs (nC) :
- 155@10V
- Current Rating (Amps) :
- 24A
- Maximum Drain Source Resistance (mOhm) :
- 450@15V
- Maximum Power Dissipation (mW) :
- 1800000
- Channel Mode :
- Enhancement
- Qualification Status :
- Not Qualified
- Typical Input Capacitance @ Vds (pF) :
- 5500@800V
- PCB changed :
- 6
- Typical Turn-Off Delay Time (ns) :
- 5
- Package Height :
- 3.18
- Number of Elements per Chip :
- 1
- Frequency :
- -
- Package :
- Tube
- Series :
- DE
- Type :
- MOSFET
- Maximum Gate Source Voltage (V) :
- ±20
- Minimum Operating Temperature (°C) :
- -55
- Transistor Type :
- N-Channel
- Pin Count :
- 6
- Base Product Number :
- DE475
- Typical Output Capacitance @ Vds (pF) :
- 190@800V
- Military :
- No
- Noise Figure :
- -
- Configuration :
- Single Quad Source
- ECCN Code :
- EAR99
- Subcategory :
- FET General Purpose Power
- Maximum Operating Temperature (°C) :
- 175
- Highest Frequency Band :
- VERY HIGH FREQUENCY BAND
- Channel Type :
- N
- Supplier Device Package :
- DE475
- Mounting :
- Surface Mount
- Package / Case :
- 6-SMD, Flat Lead Exposed Pad
- Datasheets
- DE475-102N21A

DE475-102N21A datasheet pdf and Transistors - FETs, MOSFETs - RF product details from IXYS stock available at
Features:
- N-Channel RF FET transistor
- Maximum drain-source voltage of 1000V
- Maximum drain current of 24A
- 6-pin TO-247 package
- Designed for use in RF applications
Applications: The IXYS DE475-102N21A is suitable for use in RF applications such as RF power amplifiers, RF switches, and RF signal processing. It can also be used in high-voltage switching applications.
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