DAP222T1

Manufacturer :

onsemi

Product Category :

Diodes - Rectifiers - Arrays

Max Reverse Voltage (DC) :

80V

Max Surge Current :

2A

Time@Peak Reflow Temperature-Max (s) :

40

Max Reverse Leakage Current :

100nA

Current - Reverse Leakage @ Vr :

100nA @ 70V

Height :

800μm

Operating Temperature - Junction :

150°C Max

Capacitance :

3.5pF

Element Configuration :

Common Anode

Diode Element Material :

SILICON

Power Dissipation :

150mW

Peak Reflow Temperature (Cel) :

260

Base Part Number :

DAP222

Number of Phases :

1

Voltage - Rated DC :

80V

Application :

GENERAL PURPOSE

ECCN Code :

EAR99

Number of Terminations :

3

Halogen Free :

Halogen Free

Mounting Type :

Surface Mount

Width :

900μm

Terminal Position :

Dual

Package / Case :

SC-75, SOT-416

Peak Non-Repetitive Surge Current :

2A

Min Operating Temperature :

-55°C

Voltage - Forward (Vf) (Max) @ If :

1.2V @ 100mA

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Published :

2005

Forward Current :

100mA

Reverse Test Voltage :

70V

Number of Elements :

2

Surface Mount :

yes

HTS Code :

8541.10.00.70

Pbfree Code :

yes

Max Operating Temperature :

150°C

Diode Type :

Standard

Current - Average Rectified (Io) :

100mA DC

Contact Plating :

Tin

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Output Current-Max :

0.1A

Reverse Recovery Time :

10 ns

Current Rating :

100mA

Packaging :

Tape and Reel (TR)

Factory Lead Time :

8 Weeks

Diode Configuration :

1 Pair Common Anode

Recovery Time :

4 ns

Number of Pins :

3

Speed :

Small Signal =< 200mA (Io), Any Speed

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Max Repetitive Reverse Voltage (Vrrm) :

80V

Pin Count :

3

Lead Free :

Lead Free

Radiation Hardening :

No

Peak Reverse Current :

100nA

Length :

1.65mm

Forward Voltage :

1.2V

Average Rectified Current :

100mA