D44VH10G
- Mfr.Part #
- D44VH10G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 15A TO220
- Stock
- 2,729
- In Stock :
- 2,729
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 4.82mm
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Max Power Dissipation :
- 83W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 80V
- Published :
- 2005
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Breakdown Voltage :
- 80V
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- ACTIVE (Last Updated: 13 hours ago)
- Number of Pins :
- 3
- Voltage - Rated DC :
- 80V
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 1V
- Contact Plating :
- Tin
- Power Dissipation :
- 83W
- Current Rating :
- 15A
- Max Collector Current :
- 15A
- Height :
- 15.75mm
- Radiation Hardening :
- No
- Weight :
- 4.535924g
- Emitter Base Voltage (VEBO) :
- 7V
- Frequency :
- 50MHz
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 400mA, 8A
- Collector Emitter Saturation Voltage :
- 800mV
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-220-3
- Length :
- 10.28mm
- Mounting Type :
- Through Hole
- Transition Frequency :
- 50MHz
- Case Connection :
- COLLECTOR
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- hFE Min :
- 35
- Surface Mount :
- No
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 80V
- Gain Bandwidth Product :
- 50MHz
- Factory Lead Time :
- 9 Weeks
- Packaging :
- Tube
- Datasheets
- D44VH10G
D44VH10G Documents

NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
D44VH10G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 4A 1V.The collector emitter saturation voltage is 800mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 15A.In the part, the transition frequency is 50MHz.A maximum collector current of 15A volts can be achieved.
D44VH10G Features
the DC current gain for this device is 20 @ 4A 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 400mV @ 400mA, 8A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 50MHz
D44VH10G Applications
There are a lot of ON Semiconductor
D44VH10G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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