D44C12G

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Mfr.Part #
D44C12G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 80V 4A TO220
Stock
39,582
In Stock :
39,582

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 1A
Mount :
Through Hole
Number of Elements :
1
Frequency :
40MHz
Transition Frequency :
40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 200mA 1V
Terminal Finish :
Tin (Sn)
Emitter Base Voltage (VEBO) :
5V
Element Configuration :
Single
Transistor Type :
NPN
Published :
2007
Power Dissipation :
30W
Gain Bandwidth Product :
40MHz
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
3
Case Connection :
COLLECTOR
ECCN Code :
EAR99
Pin Count :
3
Number of Terminations :
3
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
Collector Emitter Breakdown Voltage :
80V
JESD-609 Code :
e3
Collector Emitter Saturation Voltage :
135mV
RoHS Status :
RoHS Compliant
Collector Base Voltage (VCBO) :
5V
Max Collector Current :
4A
Lead Free :
Lead Free
Max Power Dissipation :
30W
Package / Case :
TO-220-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
NPN
Time@Peak Reflow Temperature-Max (s) :
40
Qualification Status :
Not Qualified
Collector Emitter Voltage (VCEO) :
80V
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
260
Transistor Element Material :
SILICON
Voltage - Rated DC :
80V
Current Rating :
4A
hFE Min :
40
Pbfree Code :
yes
Packaging :
Tube
JEDEC-95 Code :
TO-220AB
Transistor Application :
SWITCHING
Current - Collector Cutoff (Max) :
100nA
Datasheets
D44C12G
Introducing Transistors - Bipolar (BJT) - Single onsemi D44C12G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:3, Package / Case:TO-220-3, Mounting Type:Through Hole, D44C12G pinout, D44C12G datasheet PDF, D44C12G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi D44C12G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi D44C12G


NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

D44C12G Overview


This device has a DC current gain of 40 @ 200mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 135mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 4A.In this part, there is a transition frequency of 40MHz.The maximum collector current is 4A volts.

D44C12G Features


the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 135mV
the vce saturation(Max) is 500mV @ 50mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 40MHz


D44C12G Applications


There are a lot of ON Semiconductor
D44C12G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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