CY7C2170KV18-400BZXC

Manufacturer :

Infineon Technologies

Product Category :

Memory

Supply Voltage-Min (Vsup) :

1.7V

Word Size :

36b

Time@Peak Reflow Temperature-Max (s) :

30

Output Characteristics :

3-STATE

Operating Supply Voltage :

1.8V

Voltage - Supply :

1.7V~1.9V

Radiation Hardening :

No

Density :

18 Mb

Pin Count :

165

Memory Interface :

Parallel

Number of Functions :

1

Factory Lead Time :

13 Weeks

Memory Size :

18Mb 512K x 36

Operating Temperature :

0°C~70°C TA

Number of Terminations :

165

Nominal Supply Current :

640mA

Memory Width :

36

Access Time :

450 ps

Clock Frequency :

400MHz

Peak Reflow Temperature (Cel) :

260

Base Part Number :

CY7C2170

Memory Type :

Volatile

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Supply Voltage-Max (Vsup) :

1.9V

Address Bus Width :

18b

I/O Type :

COMMON

Number of Ports :

2

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mounting Type :

Surface Mount

Mount :

Surface Mount

Published :

2003

Length :

15mm

Supply Voltage :

1.8V

Memory Format :

SRAM

Packaging :

Tray

RoHS Status :

ROHS3 Compliant

Sync/Async :

SYNCHRONOUS

Height Seated (Max) :

1.4mm

Number of Pins :

165

Terminal Pitch :

1mm

Package / Case :

165-LBGA

Terminal Position :

BOTTOM

JESD-609 Code :

e1