CY7C1911KV18-300BZXC

Manufacturer :

Infineon Technologies

Product Category :

Memory

JESD-609 Code :

e1

Published :

2003

Voltage - Supply :

1.7V~1.9V

Packaging :

Tray

Operating Supply Voltage :

1.8V

Nominal Supply Current :

490mA

Number of Ports :

2

Radiation Hardening :

No

Memory Width :

9

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Output Characteristics :

3-STATE

Memory Format :

SRAM

Supply Voltage-Max (Vsup) :

1.9V

Sync/Async :

SYNCHRONOUS

Supply Voltage-Min (Vsup) :

1.7V

Address Bus Width :

19b

Memory Type :

Volatile

Operating Temperature :

0°C~70°C TA

Density :

18 Mb

Memory Interface :

Parallel

Base Part Number :

CY7C1911

Access Time :

450 ps

Factory Lead Time :

13 Weeks

Mounting Type :

Surface Mount

Supply Voltage :

1.8V

Number of Functions :

1

Terminal Position :

BOTTOM

Height Seated (Max) :

1.4mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Size :

18Mb 2M x 9

Number of Terminations :

165

Length :

15mm

Terminal Pitch :

1mm

Standby Voltage-Min :

1.7V

Number of Pins :

165

I/O Type :

Separate

Package / Case :

165-LBGA

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Clock Frequency :

300MHz

Peak Reflow Temperature (Cel) :

260

Word Size :

9b

Pin Count :

165