CY7C136E-25JXI

Manufacturer :

Infineon Technologies

Product Category :

Memory

Output Characteristics :

3-STATE

Height Seated (Max) :

5.08mm

Memory Type :

Volatile

Write Cycle Time - Word, Page :

25ns

Operating Temperature :

-40°C~85°C TA

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Package / Case :

52-LCC (J-Lead)

Memory Format :

SRAM

I/O Type :

COMMON

Supply Voltage :

5V

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

30

Number of Functions :

1

Power Supplies :

5V

Density :

16 Kb

Address Bus Width :

22b

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Number of Ports :

2

ECCN Code :

EAR99

Standby Current-Max :

0.015A

Published :

2011

Memory Size :

16Kb 2K x 8

Terminal Position :

QUAD

Base Part Number :

CY7C136

Memory Interface :

Parallel

Memory Width :

8

Number of Terminations :

52

Nominal Supply Current :

180mA

Operating Supply Voltage :

5V

Sync/Async :

ASYNCHRONOUS

Lead Free :

Lead Free

Voltage - Supply :

4.5V~5.5V

Word Size :

8B

Mount :

Surface Mount

Number of Pins :

52