CY7C131E-55NXC

Manufacturer :

Infineon Technologies

Product Category :

Memory

RoHS Status :

ROHS3 Compliant

Published :

2011

Word Size :

8B

Operating Supply Voltage :

5V

Nominal Supply Current :

160mA

Address Bus Width :

20b

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Power Supplies :

5V

Output Characteristics :

3-STATE

Supply Voltage :

5V

Package / Case :

52-BQFP

Density :

8 kB

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

20

Memory Type :

Volatile

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Write Cycle Time - Word, Page :

55ns

Terminal Pitch :

0.65mm

Factory Lead Time :

10 Weeks

JESD-609 Code :

e3

Length :

10mm

Number of Pins :

52

Number of Terminations :

52

Memory Width :

8

Sync/Async :

ASYNCHRONOUS

Terminal Position :

QUAD

Lead Free :

Lead Free

Operating Temperature :

0°C~70°C TA

Memory Size :

8Kb 1K x 8

Number of Ports :

2

Memory Interface :

Parallel

Memory Format :

SRAM

Peak Reflow Temperature (Cel) :

260

Organization :

1KX8

Standby Current-Max :

0.015A

Packaging :

Tray

Number of Functions :

1

Voltage - Supply :

4.5V~5.5V

I/O Type :

COMMON

Access Time (Max) :

55 ns

Mounting Type :

Surface Mount