CY7C1312KV18-333BZC
- Mfr.Part #
- CY7C1312KV18-333BZC
- Manufacturer
- Infineon Technologies
- Package / Case
- 165-LBGA
- Datasheet
- Download
- Description
- IC SRAM 18MBIT PARALLEL 165FBGA
- Stock
- 17,723
- In Stock :
- 17,723
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Memory
- Pin Count :
- 165
- Clock Frequency :
- 333MHz
- JESD-609 Code :
- e0
- Length :
- 15mm
- Number of Pins :
- 165
- Nominal Supply Current :
- 690mA
- Height Seated (Max) :
- 1.4mm
- Mounting Type :
- Surface Mount
- I/O Type :
- Separate
- Voltage - Supply :
- 1.7V~1.9V
- Memory Size :
- 18Mb 1M x 18
- Number of Terminations :
- 165
- Packaging :
- Tray
- Memory Interface :
- Parallel
- Address Bus Width :
- 19b
- Peak Reflow Temperature (Cel) :
- 235
- Additional Feature :
- PIPELINED ARCHITECTURE
- Density :
- 18 Mb
- Published :
- 2003
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Organization :
- 1MX18
- Sync/Async :
- SYNCHRONOUS
- Number of Functions :
- 1
- Memory Width :
- 18
- Supply Voltage :
- 1.8V
- Mount :
- Surface Mount
- RoHS Status :
- Non-RoHS Compliant
- Operating Supply Voltage :
- 1.8V
- Factory Lead Time :
- 13 Weeks
- Operating Temperature :
- 0°C~70°C TA
- Memory Type :
- Volatile
- Access Time :
- 450 ps
- Standby Voltage-Min :
- 1.7V
- Radiation Hardening :
- No
- Memory Format :
- SRAM
- Terminal Position :
- BOTTOM
- Terminal Pitch :
- 1mm
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Word Size :
- 18b
- Output Characteristics :
- 3-STATE
- Package / Case :
- 165-LBGA
- Time@Peak Reflow Temperature-Max (s) :
- 20
- Base Part Number :
- CY7C1312
- Number of Ports :
- 2
- Supply Voltage-Max (Vsup) :
- 1.9V
- Supply Voltage-Min (Vsup) :
- 1.7V
- Datasheets
- CY7C1312KV18-333BZC

Memory Infineon Technologies CY7C1312KV18-333BZC Overview
Introducing the CY7C1312KV18-333BZC from Infineon Technologies, a state-of-the-art Memory component that is engineered to meet the rigorous demands of high-performance data storage and processing applications. This integrated circuit (IC) boasts a robust 18Mbit SRAM capacity, housed in a compact 165FBGA package, making it an ideal solution for advanced systems requiring high-speed, reliable memory storage. The Memory Infineon Technologies CY7C1312KV18-333BZC is designed to deliver exceptional speed and reliability, addressing the critical needs of complex digital systems by facilitating swift data access and high throughput.
CY7C1312KV18-333BZC Features
The CY7C1312KV18-333BZC IC features include its large 18Mbit storage capacity and a high-speed parallel interface, ensuring rapid data handling capabilities essential for modern applications. Its compact 165FBGA packaging is specifically designed for efficient space utilization on printed circuit boards, making it particularly beneficial for densely packed electronic assemblies. Furthermore, this SRAM component offers stable operation under extended industrial temperature ranges, supporting its use in a variety of challenging environmental conditions.
CY7C1312KV18-333BZC Applications
- Networking Equipment: Utilized in routers and switches for buffering and high-speed data caching, enhancing overall network efficiency.
- Telecommunication Systems: Employs in telecom infrastructure to manage real-time signal processing tasks, crucial for maintaining seamless communication channels.
- Automotive Electronics: Integrated into automotive systems for fast data processing and storage, critical for advanced driver-assistance systems (ADAS) and other in-vehicle networks.
- Industrial Automation: Serves as a reliable memory solution in automation controllers and real-time systems, facilitating improved process control and operational reliability.
- Medical Devices: Applied in medical imaging systems, aiding in the rapid and precise handling of large amounts of diagnostic data, critical for effective patient care and treatment.
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