CY7C1312CV18-200BZC
- Mfr.Part #
- CY7C1312CV18-200BZC
- Manufacturer
- Infineon Technologies
- Package / Case
- 165-LBGA
- Datasheet
- Download
- Description
- IC SRAM 18MBIT PARALLEL 165FBGA
- Stock
- 2
- In Stock :
- 2
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Memory
- Width :
- 13mm
- Access Time :
- 450 ps
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Memory Width :
- 18
- Packaging :
- Tray
- ECCN Code :
- 3A991.B.2.A
- Surface Mount :
- yes
- Height Seated (Max) :
- 1.4mm
- Memory Size :
- 18Mb 1M x 18
- Operating Supply Voltage :
- 1.8V
- Supply Voltage-Max (Vsup) :
- 1.9V
- Mounting Type :
- Surface Mount
- Memory Format :
- SRAM
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Standby Current-Max :
- 0.38A
- Length :
- 15mm
- Output Characteristics :
- 3-STATE
- Package / Case :
- 165-LBGA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Clock Frequency :
- 200MHz
- HTS Code :
- 8542.32.00.41
- Published :
- 2003
- Organization :
- 1MX18
- Supply Voltage :
- 1.8V
- JESD-609 Code :
- e0
- Number of Pins :
- 165
- Pin Count :
- 165
- Reach Compliance Code :
- not_compliant
- Qualification Status :
- Not Qualified
- Standby Voltage-Min :
- 1.7V
- Density :
- 18 Mb
- Base Part Number :
- CY7C1312
- Voltage - Supply :
- 1.7V~1.9V
- RoHS Status :
- Non-RoHS Compliant
- Additional Feature :
- PIPELINED ARCHITECTURE
- Number of Terminations :
- 165
- Peak Reflow Temperature (Cel) :
- 220
- Memory Interface :
- Parallel
- Number of Functions :
- 1
- I/O Type :
- Separate
- Terminal Pitch :
- 1mm
- Memory Type :
- Volatile
- Supply Voltage-Min (Vsup) :
- 1.7V
- Lead Free :
- Contains Lead
- Operating Temperature :
- 0°C~70°C TA
- Supply Current-Max :
- 0.675mA
- Terminal Position :
- BOTTOM
- Datasheets
- CY7C1312CV18-200BZC

Memory Infineon Technologies CY7C1312CV18-200BZC Overview
The Memory Infineon Technologies CY7C1312CV18-200BZC is an advanced 18Mbit SRAM component engineered by Infineon Technologies, tailored for high-speed, reliable performance in critical applications. This IC is housed in a compact 165FBGA package, designed to meet the stringent demands of contemporary digital systems. With its parallel interface, this SRAM module offers exceptional data integrity and speed, making it an ideal solution for designers looking to enhance system performance while maintaining a low power footprint.
CY7C1312CV18-200BZC Features
This SRAM device boasts a dense 18Mbit storage capacity, facilitating efficient data management in complex applications without compromising on performance. Its parallel interface ensures robust communication and fast data transfer rates. The 165FBGA package is not only space-efficient but also conducive to improved thermal management and reduced electromagnetic interference, providing a reliable basis for high-performance electronics design.
CY7C1312CV18-200BZC Applications
- Networking Equipment: Utilized in routers and switches, enhancing cache memory to manage high-speed data transmissions and signal integrity.
- Telecommunications: Serves in telecommunications infrastructure, supporting error correction and buffering to maintain consistent data flow and service reliability.
- Automotive Electronics: Employed in advanced driver-assistance systems (ADAS) to process real-time sensor data, ensuring rapid response times and system reliability.
- Industrial Automation: Critical in managing operational data in real-time control systems, aiding in process optimization and equipment monitoring for industrial applications.
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