CY7C1312BV18-167BZCT

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Mfr.Part #
CY7C1312BV18-167BZCT
Manufacturer
Infineon Technologies
Package / Case
165-LBGA
Datasheet
Download
Description
IC SRAM 18MBIT PARALLEL 165FBGA
Stock
44,248
In Stock :
44,248

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Manufacturer :
Infineon Technologies
Product Category :
Memory
Memory Format :
SRAM
Mounting Type :
Surface Mount
Surface Mount :
yes
Memory Type :
Volatile
Length :
15mm
Standby Voltage-Min :
1.7V
Memory Interface :
Parallel
Terminal Position :
BOTTOM
Voltage - Supply :
1.7V~1.9V
Memory Density :
18874368 bit
Organization :
1MX18
Qualification Status :
Not Qualified
Operating Temperature :
0°C~70°C TA
Number of Pins :
165
I/O Type :
Separate
Height Seated (Max) :
1.4mm
Number of Terminations :
165
Package / Case :
165-LBGA
Width :
13mm
Power Supplies :
1.5/1.81.8V
Output Characteristics :
3-STATE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Clock Frequency :
167MHz
Pbfree Code :
No
Additional Feature :
PIPELINED ARCHITECTURE
Terminal Pitch :
1mm
Reach Compliance Code :
not_compliant
Memory Size :
18Mb 1M x 18
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
Non-RoHS Compliant
Supply Voltage-Max (Vsup) :
1.9V
Published :
2003
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Supply Voltage :
1.8V
Number of Functions :
1
Lead Free :
Contains Lead
Standby Current-Max :
0.36A
Packaging :
Tape and Reel (TR)
Base Part Number :
CY7C1312
Supply Current-Max :
0.6mA
Memory Width :
18
Access Time :
500 ps
Supply Voltage-Min (Vsup) :
1.7V
Introducing Memory Infineon Technologies CY7C1312BV18-167BZCT from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:0°C~70°C TA, Number of Pins:165, Number of Terminations:165, Package / Case:165-LBGA, Base Part Number:CY7C1312, CY7C1312BV18-167BZCT pinout, CY7C1312BV18-167BZCT datasheet PDF, CY7C1312BV18-167BZCT amp .Beyond Memory Infineon Technologies CY7C1312BV18-167BZCT ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies CY7C1312BV18-167BZCT


Memory Infineon Technologies CY7C1312BV18-167BZCT Overview

The Memory Infineon Technologies CY7C1312BV18-167BZCT is a high-performance IC SRAM designed to meet the rigorous demands of advanced computing systems. This 18Mbit SRAM chip, housed in a compact 165FBGA package, is engineered by Infineon Technologies, renowned for their innovative approach in semiconductor technology. Ideal for applications requiring fast access and high data throughput, this memory module excels in delivering efficient and reliable performance. With its large storage capacity and fast parallel interface, it caters perfectly to systems requiring quick data retrieval and substantial buffering capabilities, making it an excellent choice for businesses looking to enhance their technology infrastructure.

CY7C1312BV18-167BZCT Features

This SRAM component boasts several key features that make it a standout choice for high-performance computing needs. It includes a large 18Mbit storage capacity, fast access speeds facilitated by its parallel interface, and a robust 165FBGA packaging that ensures durability and reliability in a wide range of operating conditions. Its low-latency capabilities ensure swift data processing, vital for critical applications.

CY7C1312BV18-167BZCT Applications

  • Advanced Computing Systems: Utilized in server farms and data centers requiring rapid access to large amounts of data for real-time processing.
  • Telecommunications Equipment: Employs its fast data retrieval capabilities to manage and buffer data in telecommunications infrastructures, enhancing efficiency and connectivity.
  • Automotive Electronics: Applied in advanced driver-assistance systems (ADAS) to store and manage high-volume sensor data efficiently, improving vehicle safety and performance.
  • Industrial Automation: Utilized in control systems for real-time processing of operational data, increasing factory automation efficiency and reliability.
  • Aerospace and Defense: This memory is critical in applications requiring high reliability and robust data handling capabilities, such as in satellite communication systems and military hardware.
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