CY7C1165KV18-550BZC
- Mfr.Part #
- CY7C1165KV18-550BZC
- Manufacturer
- Infineon Technologies
- Package / Case
- 165-LBGA
- Datasheet
- Download
- Description
- IC SRAM 18MBIT PARALLEL 165FBGA
- Stock
- 42,886
- In Stock :
- 42,886
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Memory
- Operating Supply Voltage :
- 1.8V
- Supply Voltage :
- 1.8V
- Packaging :
- Tray
- Mount :
- Surface Mount
- Nominal Supply Current :
- 1.1A
- Number of Terminations :
- 165
- Package / Case :
- 165-LBGA
- Peak Reflow Temperature (Cel) :
- 235
- Address Bus Width :
- 17b
- JESD-609 Code :
- e0
- Factory Lead Time :
- 13 Weeks
- Access Time :
- 450 ps
- RoHS Status :
- Non-RoHS Compliant
- Sync/Async :
- SYNCHRONOUS
- Supply Voltage-Max (Vsup) :
- 1.9V
- Output Characteristics :
- 3-STATE
- Radiation Hardening :
- No
- Clock Frequency :
- 550MHz
- Memory Format :
- SRAM
- Number of Functions :
- 1
- Mounting Type :
- Surface Mount
- Additional Feature :
- PIPELINED ARCHITECTURE
- Length :
- 15mm
- Terminal Position :
- BOTTOM
- Voltage - Supply :
- 1.7V~1.9V
- Terminal Pitch :
- 1mm
- Number of Pins :
- 165
- Memory Width :
- 36
- Supply Voltage-Min (Vsup) :
- 1.7V
- Density :
- 18 Mb
- Memory Size :
- 18Mb 512K x 36
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Time@Peak Reflow Temperature-Max (s) :
- 20
- Standby Current-Max :
- 0.34A
- Standby Voltage-Min :
- 1.7V
- Memory Interface :
- Parallel
- Operating Temperature :
- 0°C~70°C TA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Base Part Number :
- CY7C1165
- I/O Type :
- Separate
- Height Seated (Max) :
- 1.4mm
- Word Size :
- 36b
- Number of Ports :
- 2
- Published :
- 2003
- Memory Type :
- Volatile
- Datasheets
- CY7C1165KV18-550BZC

Memory Infineon Technologies CY7C1165KV18-550BZC Overview
The Memory Infineon Technologies CY7C1165KV18-550BZC represents a cutting-edge solution in the field of integrated circuits. This high-performance IC SRAM delivers a substantial 18Mbit of parallel data storage capacity, encapsulated in a compact 165FBGA package. Engineered by Infineon Technologies, a leader in semiconductor innovation, this product offers reliability and speed, essential for sophisticated applications that demand robust data integrity and quick access times. The integration of advanced memory technology makes it an ideal choice for businesses looking to leverage high-speed memory for complex computations and data-intensive operations, ensuring enhanced system performance and scalability.
CY7C1165KV18-550BZC Features
This SRAM module boasts a variety of features that make it highly suitable for a wide range of industrial applications. Key features include a large 18Mbit capacity and a fast access time of 550 MHz, which facilitates quick data retrieval, essential for high-performance computing environments. The use of a 165FBGA package allows for efficient space utilization and improved thermal characteristics, making it easier to integrate into various electronic assemblies without compromising on performance.
CY7C1165KV18-550BZC Applications
- High-Performance Computing (HPC): Utilized in server farms and data centers where high speed, reliability, and capacity are critical for handling large volumes of data and complex computations.
- Networking Equipment: Essential for use in routers and switches, where rapid access to data buffers is required to manage high-speed network traffic effectively.
- Telecommunications: Supports the demanding memory requirements of telecommunications infrastructure, facilitating enhanced data transmission capabilities.
- Automotive Electronics: Applied in advanced driver-assistance systems (ADAS) where quick memory access is necessary for real-time processing and decision-making.
- Industrial Automation: Ideal for use in automated control systems where precision and speed are needed to process large amounts of operational data reliably.
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