CY7C109B-12VC

Manufacturer :

Infineon Technologies

Product Category :

Memory

Memory Format :

SRAM

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

I/O Type :

COMMON

Surface Mount :

yes

Published :

2001

Memory Density :

1048576 bit

RoHS Status :

Non-RoHS Compliant

Output Characteristics :

3-STATE

Memory Interface :

Parallel

Standby Current-Max :

0.01A

Terminal Position :

Dual

Memory Width :

8

Mounting Type :

Surface Mount

Supply Current-Max :

0.09mA

Standby Voltage-Min :

4.5V

Length :

20.955mm

Number of Terminations :

32

Number of Functions :

1

Qualification Status :

Not Qualified

Supply Voltage-Max (Vsup) :

5.5V

Base Part Number :

CY7C109

Supply Voltage-Min (Vsup) :

4.5V

Memory Type :

Volatile

Frequency :

12GHz

Terminal Finish :

Tin/Lead (Sn/Pb)

Power Supplies :

5V

Terminal Pitch :

1.27mm

Pin Count :

32

Voltage - Supply :

4.5V~5.5V

ECCN Code :

3A991.B.2.B

Width :

10.16mm

Memory Size :

1Mb 128K x 8

Time@Peak Reflow Temperature-Max (s) :

30

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

225

Supply Voltage :

5V

Access Time (Max) :

12 ns

Packaging :

Tube

Package / Case :

32-BSOJ (0.400, 10.16mm Width)

Lead Free :

Contains Lead

Number of Pins :

32

Write Cycle Time - Word, Page :

12ns

Height Seated (Max) :

3.7592mm

Operating Temperature :

0°C~70°C TA

JESD-609 Code :

e0

Organization :

128KX8