CY7C1069GN30-10ZSXIT

Manufacturer :

Infineon Technologies

Product Category :

Memory

Memory Type :

Volatile

Terminal Pitch :

0.8mm

Number of Functions :

1

Length :

22.415mm

Packaging :

Tape and Reel (TR)

ECCN Code :

3A991.B.2.A

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Surface Mount :

yes

Memory Format :

SRAM

HTS Code :

8542.32.00.41

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G54

Memory Density :

16777216 bit

Factory Lead Time :

13 Weeks

Height Seated (Max) :

1.2mm

Supply Voltage-Min (Vsup) :

3V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Supply Voltage :

3.3V

Memory Interface :

Parallel

Supply Voltage-Max (Vsup) :

3.6V

Memory Width :

8

Package / Case :

54-TSOP (0.400, 10.16mm Width)

Width :

10.16mm

Organization :

2MX8

Memory Size :

16Mb 2M x 8

Operating Temperature :

-40°C~85°C TA

Write Cycle Time - Word, Page :

10ns

Voltage - Supply :

2.2V~3.6V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Access Time (Max) :

10 ns

Number of Terminations :

54

Mounting Type :

Surface Mount