CY7C1069G30-10ZSXIT

Manufacturer :

Infineon Technologies

Product Category :

Memory

Memory Width :

8

Time@Peak Reflow Temperature-Max (s) :

30

Supply Voltage-Min (Vsup) :

2.2V

Packaging :

Tape and Reel (TR)

Published :

2012

Number of Terminations :

54

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mounting Type :

Surface Mount

Width :

10.16mm

Memory Format :

SRAM

Number of Functions :

1

HTS Code :

8542.32.00.41

Terminal Position :

Dual

Memory Density :

16777216 bit

Memory Size :

16Mb 2M x 8

Height Seated (Max) :

1.2mm

Length :

22.415mm

Voltage - Supply :

2.2V~3.6V

Supply Voltage :

3V

Access Time (Max) :

10 ns

Terminal Finish :

Tin (Sn)

Organization :

2MX8

JESD-30 Code :

R-PDSO-G54

ECCN Code :

3A991.B.2.A

Terminal Pitch :

0.8mm

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Supply Voltage-Max (Vsup) :

3.6V

Memory Type :

Volatile

Write Cycle Time - Word, Page :

10ns

RoHS Status :

ROHS3 Compliant

Memory Interface :

Parallel

Factory Lead Time :

13 Weeks

Operating Temperature :

-40°C~85°C TA

Surface Mount :

yes

Package / Case :

54-TSOP (0.400, 10.16mm Width)