CY7C1069G30-10ZSXI

Manufacturer :

Infineon Technologies

Product Category :

Memory

Access Time (Max) :

10 ns

Surface Mount :

yes

Supply Voltage-Min (Vsup) :

2.2V

Memory Density :

16777216 bit

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Type :

Volatile

Write Cycle Time - Word, Page :

10ns

ECCN Code :

3A991.B.2.A

Operating Temperature :

-40°C~85°C TA

Supply Voltage-Max (Vsup) :

3.6V

Memory Size :

16Mb 2M x 8

JESD-30 Code :

R-PDSO-G54

Number of Functions :

1

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

HTS Code :

8542.32.00.41

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

13 Weeks

Width :

10.16mm

Voltage - Supply :

2.2V~3.6V

Terminal Position :

Dual

Supply Voltage :

3V

Length :

22.415mm

Terminal Pitch :

0.8mm

Mounting Type :

Surface Mount

Memory Width :

8

Memory Format :

SRAM

Organization :

2MX8

Height Seated (Max) :

1.2mm

Package / Case :

54-TSOP (0.400, 10.16mm Width)

Packaging :

Tray

Published :

2012

Terminal Finish :

Tin (Sn)

Memory Interface :

Parallel

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

54