CY7C10612DV33-10ZSXI

Manufacturer :

Infineon Technologies

Product Category :

Memory

Supply Voltage :

3.3V

Write Cycle Time - Word, Page :

10ns

Supply Voltage-Max (Vsup) :

3.6V

Standby Voltage-Min :

2V

Voltage - Supply :

3V~3.6V

JESD-609 Code :

e3

Operating Temperature :

-40°C~85°C TA

Nominal Supply Current :

175mA

Base Part Number :

CY7C10612

I/O Type :

COMMON

Number of Functions :

1

Standby Current-Max :

0.025A

Mounting Type :

Surface Mount

Mount :

Surface Mount

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Sync/Async :

ASYNCHRONOUS

RoHS Status :

ROHS3 Compliant

Terminal Pitch :

0.8mm

Memory Type :

Volatile

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Memory Size :

16Mb 1M x 16

Number of Pins :

54

Word Size :

16b

Operating Supply Voltage :

3.3V

Number of Terminations :

54

Density :

16 Mb

Address Bus Width :

20b

Time@Peak Reflow Temperature-Max (s) :

20

Memory Interface :

Parallel

Supply Voltage-Min (Vsup) :

3V

Output Characteristics :

3-STATE

Lead Free :

Lead Free

Memory Width :

16

Max Frequency :

100MHz

Package / Case :

54-TSOP (0.400, 10.16mm Width)

Pin Count :

54

Published :

1996

Number of Ports :

1

Memory Format :

SRAM

Peak Reflow Temperature (Cel) :

260

Packaging :

Tube