CY7C1041G30-10BVXI

Manufacturer :

Infineon Technologies

Product Category :

Memory

Mounting Type :

Surface Mount

Memory Width :

16

Memory Type :

Volatile

Write Cycle Time - Word, Page :

10ns

Number of Functions :

1

RoHS Status :

ROHS3 Compliant

Packaging :

Tray

Published :

2012

Memory Format :

SRAM

Memory Density :

4194304 bit

Terminal Pitch :

0.75mm

Supply Voltage-Max (Vsup) :

3.6V

I/O Type :

COMMON

Memory Size :

4Mb 256K x 16

Factory Lead Time :

13 Weeks

Power Supplies :

2.5/3.3V

Height Seated (Max) :

1mm

Supply Current-Max :

0.045mA

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e1

ECCN Code :

3A991.B.2.A

Width :

6mm

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Qualification Status :

Not Qualified

Supply Voltage-Min (Vsup) :

2.2V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Pins :

48

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Standby Voltage-Min :

1V

Output Characteristics :

3-STATE

Memory Interface :

Parallel

Access Time (Max) :

10 ns

Terminal Position :

BOTTOM

HTS Code :

8542.32.00.41

Supply Voltage :

3V

Voltage - Supply :

2.2V~3.6V

Length :

8mm

Organization :

256KX16

Operating Temperature :

-40°C~85°C TA

Package / Case :

48-VFBGA

Standby Current-Max :

0.008A

Lead Free :

Lead Free

Number of Terminations :

48