CY7C1041BNV33L-12VXC

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Mfr.Part #
CY7C1041BNV33L-12VXC
Manufacturer
Infineon Technologies
Package / Case
44-BSOJ (0.400, 10.16mm Width)
Datasheet
Download
Description
IC SRAM 4MBIT PARALLEL 44SOJ
Stock
116
In Stock :
116

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Manufacturer :
Infineon Technologies
Product Category :
Memory
Peak Reflow Temperature (Cel) :
260
RoHS Status :
ROHS3 Compliant
Voltage - Supply :
3V~3.6V
Pbfree Code :
yes
Length :
28.575mm
Memory Interface :
Parallel
Terminal Position :
Dual
JESD-609 Code :
e4
Memory Density :
4194304 bit
Memory Type :
Volatile
Package / Case :
44-BSOJ (0.400, 10.16mm Width)
Memory Width :
16
Terminal Finish :
NICKEL PALLADIUM GOLD
Terminal Pitch :
1.27mm
Height Seated (Max) :
3.7592mm
Supply Voltage :
3.3V
Qualification Status :
COMMERCIAL
Write Cycle Time - Word, Page :
12ns
Supply Voltage-Max (Vsup) :
3.6V
Number of Terminations :
44
Supply Voltage-Min (Vsup) :
3V
Surface Mount :
yes
Memory Size :
4Mb 256K x 16
JESD-30 Code :
R-PDSO-J44
Number of Functions :
1
Time@Peak Reflow Temperature-Max (s) :
40
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Width :
10.16mm
Pin Count :
44
Mounting Type :
Surface Mount
Reach Compliance Code :
Unknown
Access Time (Max) :
12 ns
Memory Format :
SRAM
Packaging :
Tube
Organization :
256KX16
Operating Temperature :
0°C~70°C TA
Introducing Memory Infineon Technologies CY7C1041BNV33L-12VXC from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:44-BSOJ (0.400, 10.16mm Width), Number of Terminations:44, Mounting Type:Surface Mount, Operating Temperature:0°C~70°C TA, CY7C1041BNV33L-12VXC pinout, CY7C1041BNV33L-12VXC datasheet PDF, CY7C1041BNV33L-12VXC amp .Beyond Memory Infineon Technologies CY7C1041BNV33L-12VXC ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies CY7C1041BNV33L-12VXC


Memory Infineon Technologies CY7C1041BNV33L-12VXC Overview

The Memory Infineon Technologies CY7C1041BNV33L-12VXC is a high-performance 4Mbit Static Random Access Memory (SRAM) designed by Infineon Technologies, optimized for industrial and commercial applications that demand high speed and reliability. This SRAM module is built in a 44SOJ package, providing a robust and compact solution for systems requiring parallel processing capabilities. Its notable for its ease of integration into a range of designs, thanks to its straightforward bus interface, making it an ideal choice for developers looking to enhance their systems with fast and reliable memory storage solutions. The product's durability and speed make it particularly well-suited for high-performance computing environments where quick data access and integrity are critical.

CY7C1041BNV33L-12VXC Features

This SRAM device boasts several key features, including a large 4Mbit storage capacity and a parallel interface, ensuring rapid data access and processing speeds. It operates at a nominal voltage of 3.3V, which helps in reducing power consumption while maintaining performance efficiency. The 44SOJ packaging is designed to minimize space on printed circuit boards, making it ideal for dense board configurations in embedded systems. Furthermore, its operation at industrial temperature ranges enhances its reliability in varied environmental conditions.

CY7C1041BNV33L-12VXC Applications

  • Advanced Industrial Controls: Utilized in complex machine control systems where large amounts of data need to be accessed quickly and reliably to maintain system performance and stability.
  • Automotive Applications: Integrated into automotive electronics where fast data retrieval is necessary for real-time system response, contributing to improved vehicle performance and safety features.
  • Telecommunications: Employed in telecommunications infrastructure to ensure rapid access to data buffers, enhancing communication speed and reliability across networks.
  • Consumer Electronics: Used in devices like high-end gaming consoles and smart TVs, where quick data access enhances user experience by speeding up response times and improving graphical performance.
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