CY7C1021CV33-12BAIT

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Mfr.Part #
CY7C1021CV33-12BAIT
Manufacturer
Infineon Technologies
Package / Case
48-TFBGA
Datasheet
Download
Description
STANDARD SRAM, 64KX16
Stock
4,000
In Stock :
4,000

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Manufacturer :
Infineon Technologies
Product Category :
Memory
Pin Count :
48
Memory Organization :
64K x 16
Write Cycle Time - Word, Page :
12ns
JESD-30 Code :
S-PBGA-B48
Terminal Finish :
TIN LEAD
Access Time :
12 ns
Temperature Grade :
Industrial
Reach Compliance Code :
Unknown
Memory Size :
1Mbit
Parallel/Serial :
Parallel
Memory Width :
16
Terminal Form :
Ball
Mounting Type :
Surface Mount
Number of Terminals :
48
Memory Type :
Volatile
Series :
-
Number of Functions :
1
HTS Code :
8542.32.00.41
Package :
Bulk
Operating Temperature :
-40°C ~ 85°C (TA)
Technology :
SRAM - Asynchronous
Width :
7 mm
Base Product Number :
CY7C1021
Qualification Status :
Not Qualified
JESD-609 Code :
e0
Manufacturer :
Rochester Electronics LLC
Supplier Device Package :
48-FBGA (7x7)
Package Shape :
Square
Product Status :
Active
ECCN Code :
3A991.B.2.B
Memory IC Type :
STANDARD SRAM
Number of Words :
65536 words
Terminal Pitch :
0.75 mm
Memory Density :
1048576 bit
Length :
7 mm
Surface Mount :
yes
Seated Height-Max :
1.2 mm
Terminal Position :
BOTTOM
Memory Format :
SRAM
Supply Voltage-Max (Vsup) :
3.63 V
Package / Case :
48-TFBGA
Memory Interface :
Parallel
Operating Mode :
ASYNCHRONOUS
Organization :
64KX16
Voltage - Supply :
3V ~ 3.6V
Supply Voltage-Min (Vsup) :
2.97 V
Introducing Memory Infineon Technologies CY7C1021CV33-12BAIT from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-40°C ~ 85°C (TA), Package / Case:48-TFBGA, CY7C1021CV33-12BAIT pinout, CY7C1021CV33-12BAIT datasheet PDF, CY7C1021CV33-12BAIT amp .Beyond Memory Infineon Technologies CY7C1021CV33-12BAIT ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies CY7C1021CV33-12BAIT


Memory Infineon Technologies CY7C1021CV33-12BAIT Overview

Infineon Technologies CY7C1021CV33-12BAIT is a standard static random-access memory (SRAM) module with a capacity of 64 kilobytes, organized in a 16-bit word configuration. Designed to meet the demands of high-performance computing and data-intensive applications, this SRAM module offers reliable and fast data storage and retrieval capabilities.

With a voltage rating of 3.3 volts and operating speed of 12 nanoseconds, the CY7C1021CV33-12BAIT is optimized for applications requiring quick access to data and efficient memory operations. Its compact size and low power consumption make it suitable for integration into various electronic systems, enhancing their performance and efficiency.

Whether used in embedded systems, networking devices, or industrial automation equipment, Infineon Technologies CY7C1021CV33-12BAIT provides a dependable memory solution for demanding applications.

CY7C1021CV33-12BAIT Features

  • 64 kilobytes of memory organized in a 16-bit word configuration
  • Operates at a voltage of 3.3 volts
  • Fast access time of 12 nanoseconds
  • Low power consumption
  • Compact size for easy integration
  • Industrial-grade reliability

CY7C1021CV33-12BAIT Applications

  • Embedded Systems: The CY7C1021CV33-12BAIT is ideal for use in embedded systems such as microcontrollers and digital signal processors, providing fast and reliable data storage for applications in automotive, consumer electronics, and industrial control.
  • Networking Devices: In networking devices such as routers, switches, and network interface cards, this SRAM module facilitates efficient packet buffering and caching, enhancing the performance and throughput of data transmission.
  • Industrial Automation Equipment: With its industrial-grade reliability and low power consumption, the CY7C1021CV33-12BAIT is well-suited for use in industrial automation equipment such as programmable logic controllers (PLCs) and robotic systems, ensuring dependable operation in harsh environments.
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