CY7C1021BV33-12ZC

Manufacturer :

Infineon Technologies

Product Category :

Memory

Write Cycle Time - Word, Page :

12ns

Terminal Pitch :

0.8mm

Supply Voltage :

3.3V

Number of Functions :

1

Organization :

64KX16

JESD-609 Code :

e0

Operating Temperature :

0°C~70°C TA

Length :

18.41mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Memory Type :

Volatile

JESD-30 Code :

R-PDSO-G44

Supply Voltage-Min (Vsup) :

2.97V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

ECCN Code :

3A991.B.2.B

Surface Mount :

yes

Voltage - Supply :

3V~3.6V

HTS Code :

8542.32.00.41

Pbfree Code :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tray

Memory Format :

SRAM

Number of Terminations :

44

Memory Size :

1Mb 64K x 16

Pin Count :

44

RoHS Status :

Non-RoHS Compliant

Memory Width :

16

Width :

10.16mm

Terminal Position :

Dual

Access Time (Max) :

12 ns

Qualification Status :

Not Qualified

Memory Interface :

Parallel

Supply Voltage-Max (Vsup) :

3.63V

Package / Case :

44-TSOP (0.400, 10.16mm Width)

Memory Density :

1048576 bit

Height Seated (Max) :

1.2mm

Terminal Finish :

TIN LEAD

Mounting Type :

Surface Mount