CY7C1021BV33-12VC

Manufacturer :

Infineon Technologies

Product Category :

Memory

ECCN Code :

3A991.B.2.B

JESD-609 Code :

e0

Memory Width :

16

Memory Interface :

Parallel

Number of Terminations :

44

Supply Voltage-Max (Vsup) :

3.63V

Memory Size :

1Mb 64K x 16

Supply Voltage-Min (Vsup) :

2.97V

HTS Code :

8542.32.00.41

Height Seated (Max) :

3.7592mm

Surface Mount :

yes

Organization :

64KX16

Pbfree Code :

No

Width :

10.16mm

Memory Format :

SRAM

Number of Functions :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant

Supply Voltage :

3.3V

Mounting Type :

Surface Mount

Packaging :

Tube

Operating Temperature :

0°C~70°C TA

Access Time (Max) :

12 ns

Length :

28.575mm

Voltage - Supply :

3V~3.6V

Terminal Pitch :

1.27mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Write Cycle Time - Word, Page :

12ns

Qualification Status :

Not Qualified

JESD-30 Code :

R-PDSO-J44

Terminal Position :

Dual

Memory Density :

1048576 bit

Memory Type :

Volatile

Pin Count :

44

Terminal Finish :

TIN LEAD

Package / Case :

44-BSOJ (0.400, 10.16mm Width)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED