CY7C1021BV33-10VC

Manufacturer :

Infineon Technologies

Product Category :

Memory

Memory Format :

SRAM

Number of Terminations :

44

HTS Code :

8542.32.00.41

Access Time (Max) :

10 ns

Organization :

64KX16

Supply Voltage-Min (Vsup) :

2.97V

Write Cycle Time - Word, Page :

10ns

Number of Functions :

1

Surface Mount :

yes

JESD-609 Code :

e0

Memory Size :

1Mb 64K x 16

Terminal Position :

Dual

Memory Width :

16

Length :

28.575mm

Height Seated (Max) :

3.7592mm

Memory Density :

1048576 bit

Memory Type :

Volatile

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Pitch :

1.27mm

Mounting Type :

Surface Mount

Voltage - Supply :

3V~3.6V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

No

RoHS Status :

Non-RoHS Compliant

Package / Case :

44-BSOJ (0.400, 10.16mm Width)

Width :

10.16mm

Terminal Finish :

TIN LEAD

JESD-30 Code :

R-PDSO-J44

ECCN Code :

3A991.B.2.B

Memory Interface :

Parallel

Pin Count :

44

Packaging :

Tube

Operating Temperature :

0°C~70°C TA

Qualification Status :

Not Qualified

Supply Voltage-Max (Vsup) :

3.63V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Supply Voltage :

3.3V