CY62177EV30LL-55BAXI

Manufacturer :

Infineon Technologies

Product Category :

Memory

Published :

2001

Memory Interface :

Parallel

Operating Supply Voltage :

3V

Memory Type :

Volatile

Alternate Memory Width :

8

Memory Format :

SRAM

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Sync/Async :

ASYNCHRONOUS

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Series :

MoBL®

Write Cycle Time - Word, Page :

55ns

Number of Ports :

1

ECCN Code :

EAR99

Address Bus Width :

21b

Memory Size :

32Mb 4M x 8 2M x 16

Length :

9.5mm

Base Part Number :

CY62177

Factory Lead Time :

13 Weeks

Memory Width :

16

Access Time (Max) :

55 ns

Supply Voltage-Max (Vsup) :

3.7V

Time@Peak Reflow Temperature-Max (s) :

40

Supply Voltage-Min (Vsup) :

2.2V

Terminal Pitch :

0.75mm

Operating Temperature :

-40°C~85°C TA

Nominal Supply Current :

45mA

Voltage - Supply :

2.2V~3.7V

Number of Terminations :

48

Package / Case :

48-TFBGA

Lead Free :

Lead Free

Height :

1.2mm

Density :

32 Mb

Ambient Temperature Range High :

85°C

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Radiation Hardening :

No

Number of Pins :

48

I/O Type :

COMMON

Number of Functions :

1

JESD-609 Code :

e1

Terminal Position :

BOTTOM

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Packaging :

Tray

Pin Count :

48

Supply Voltage :

3V

Output Characteristics :

3-STATE