CY62148GN-45SXI

Manufacturer :

Infineon Technologies

Product Category :

Memory

Terminal Pitch :

1.27mm

Surface Mount :

yes

Write Cycle Time - Word, Page :

45ns

Supply Voltage :

5V

Memory Density :

4194304 bit

Operating Temperature :

-40°C~85°C TA

HTS Code :

8542.32.00.41

Supply Voltage-Max (Vsup) :

5.5V

ECCN Code :

3A991.B.2.A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Number of Terminations :

32

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Width :

11.303mm

Supply Voltage-Min (Vsup) :

4.5V

Memory Interface :

Parallel

Memory Type :

Volatile

Factory Lead Time :

13 Weeks

Access Time (Max) :

45 ns

Series :

MoBL®

Memory Format :

SRAM

Memory Width :

8

Voltage - Supply :

4.5V~5.5V

Mounting Type :

Surface Mount

Organization :

512KX8

Package / Case :

32-SOIC (0.445, 11.30mm Width)

JESD-30 Code :

R-PDSO-G32

Packaging :

Tape and Reel (TR)

Height Seated (Max) :

2.997mm

Length :

20.4465mm

Memory Size :

4Mb 512K x 8

Number of Functions :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED