CY62147GN18-55BVXI

Manufacturer :

Infineon Technologies

Product Category :

Memory

Supply Voltage-Min (Vsup) :

1.65V

Memory Format :

SRAM

Memory Width :

16

ECCN Code :

3A991.B.2.A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Type :

Volatile

Terminal Pitch :

0.75mm

Organization :

256KX16

Number of Terminations :

48

Width :

6mm

Number of Functions :

1

Supply Voltage-Max (Vsup) :

2.2V

Height Seated (Max) :

1mm

Memory Density :

4194304 bit

RoHS Status :

ROHS3 Compliant

HTS Code :

8542.32.00.41

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Memory Size :

4Mb 256K x 16

Access Time (Max) :

55 ns

Supply Voltage :

1.8V

Operating Temperature :

-40°C~85°C TA

Series :

MoBL®

Length :

8mm

Memory Interface :

Parallel

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

48-VFBGA

Write Cycle Time - Word, Page :

55ns

Factory Lead Time :

13 Weeks

Voltage - Supply :

1.65V~2.2V

Packaging :

Tray

Terminal Position :

BOTTOM

Mounting Type :

Surface Mount

JESD-30 Code :

R-PBGA-B48