CY62147GE18-55BVXI

Manufacturer :

Infineon Technologies

Product Category :

Memory

Access Time (Max) :

55 ns

Voltage - Supply :

1.65V~2.2V

HTS Code :

8542.32.00.41

Organization :

256KX16

Number of Terminations :

48

Memory Format :

SRAM

Surface Mount :

yes

Terminal Pitch :

0.75mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Write Cycle Time - Word, Page :

55ns

Supply Voltage-Min (Vsup) :

1.65V

Series :

MoBL®

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

RoHS Status :

ROHS3 Compliant

Published :

2012

Length :

8mm

Number of Functions :

1

JESD-30 Code :

R-PBGA-B48

Memory Interface :

Parallel

Supply Voltage-Max (Vsup) :

2.2V

ECCN Code :

3A991.B.2.A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Memory Size :

4Mb 256K x 16

Factory Lead Time :

13 Weeks

Memory Width :

16

Memory Density :

4194304 bit

Terminal Position :

BOTTOM

Mounting Type :

Surface Mount

Package / Case :

48-VFBGA

Supply Voltage :

1.8V

Packaging :

Tray

Height Seated (Max) :

1mm

Operating Temperature :

-40°C~85°C TA

Width :

6mm

Memory Type :

Volatile