CY62147G30-55BVXET

Manufacturer :

Infineon Technologies

Product Category :

Memory

Access Time (Max) :

55 ns

Supply Voltage :

3V

Memory Size :

4Mb 256K x 16

Terminal Pitch :

0.75mm

Memory Format :

SRAM

Write Cycle Time - Word, Page :

55ns

Memory Width :

16

Package / Case :

48-VFBGA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

HTS Code :

8542.32.00.41

Length :

8mm

Width :

6mm

Surface Mount :

yes

Memory Density :

4194304 bit

ECCN Code :

3A991.B.2.A

RoHS Status :

ROHS3 Compliant

Series :

MoBL®

Voltage - Supply :

2.2V~3.6V

Organization :

256KX16

Mounting Type :

Surface Mount

Number of Functions :

1

Memory Interface :

Parallel

JESD-30 Code :

R-PBGA-B48

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Height Seated (Max) :

1mm

Operating Temperature :

-40°C~125°C TA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Number of Terminations :

48

Terminal Position :

BOTTOM

Factory Lead Time :

18 Weeks

Memory Type :

Volatile

Supply Voltage-Max (Vsup) :

3.6V

Supply Voltage-Min (Vsup) :

2.2V