CY62147G30-55BVXE

Manufacturer :

Infineon Technologies

Product Category :

Memory

Supply Voltage :

3V

Memory Density :

4194304 bit

HTS Code :

8542.32.00.41

JESD-609 Code :

e4

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Surface Mount :

yes

Height Seated (Max) :

1mm

Operating Temperature :

-40°C~125°C TA

ECCN Code :

3A991.B.2.A

Length :

8mm

Width :

6mm

Factory Lead Time :

18 Weeks

Access Time (Max) :

55 ns

Number of Terminations :

48

Mounting Type :

Surface Mount

Series :

MoBL®

Terminal Position :

BOTTOM

Supply Voltage-Max (Vsup) :

3.6V

Terminal Pitch :

0.75mm

Write Cycle Time - Word, Page :

55ns

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PBGA-B48

Memory Interface :

Parallel

Package / Case :

48-VFBGA

Organization :

256KX16

Packaging :

Tray

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Supply Voltage-Min (Vsup) :

2.2V

Memory Size :

4Mb 256K x 16

Memory Width :

16

Number of Functions :

1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Type :

Volatile

Memory Format :

SRAM

Voltage - Supply :

2.2V~3.6V