CY62147EV30LL-45BVI

Manufacturer :

Infineon Technologies

Product Category :

Memory

Radiation Hardening :

No

Terminal Position :

BOTTOM

Terminal Finish :

Tin/Lead (Sn/Pb)

Published :

2001

Memory Size :

4Mb 256K x 16

Density :

4 Mb

Supply Voltage-Min (Vsup) :

2.2V

Mount :

Surface Mount

Memory Interface :

Parallel

I/O Type :

COMMON

JESD-609 Code :

e0

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mounting Type :

Surface Mount

Memory Width :

16

Sync/Async :

ASYNCHRONOUS

Operating Supply Voltage :

3V

Number of Pins :

48

Package / Case :

48-VFBGA

Standby Current-Max :

0.000007A

Peak Reflow Temperature (Cel) :

220

Write Cycle Time - Word, Page :

45ns

Packaging :

Tray

Access Time (Max) :

45 ns

Length :

8mm

Memory Type :

Volatile

Word Size :

16b

Supply Voltage-Max (Vsup) :

3.6V

Supply Voltage :

3V

Output Characteristics :

3-STATE

Operating Temperature :

-40°C~85°C TA

Terminal Pitch :

0.75mm

Base Part Number :

CY62147

Pin Count :

48

Series :

MoBL®

Number of Functions :

1

Memory Format :

SRAM

RoHS Status :

Non-RoHS Compliant

Factory Lead Time :

8 Weeks

Nominal Supply Current :

20mA

Number of Terminations :

48

Number of Ports :

1

Pbfree Code :

No

Address Bus Width :

18b

Voltage - Supply :

2.2V~3.6V

Lead Free :

Contains Lead