CY62147DV30L-55ZSXE

Manufacturer :

Infineon Technologies

Product Category :

Memory

Height Seated (Max) :

1.194mm

Memory Format :

SRAM

Memory Interface :

Parallel

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Finish :

Tin

Supply Voltage-Max (Vsup) :

3.6V

Memory Type :

Volatile

RoHS Status :

ROHS3 Compliant

Number of Functions :

1

Operating Temperature :

-40°C~125°C TA

Surface Mount :

yes

Qualification Status :

COMMERCIAL

Peak Reflow Temperature (Cel) :

260

Supply Voltage-Min (Vsup) :

2.2V

Reach Compliance Code :

Unknown

Write Cycle Time - Word, Page :

55ns

Mounting Type :

Surface Mount

Terminal Position :

Dual

Number of Terminations :

44

Memory Density :

4194304 bit

JESD-609 Code :

e3

Memory Width :

16

Length :

18.415mm

Memory Size :

4Mb 256K x 16

Voltage - Supply :

2.2V~3.6V

Supply Voltage :

3V

Width :

10.16mm

Terminal Pitch :

0.8mm

Pbfree Code :

yes

Series :

MoBL®

Package / Case :

44-TSOP (0.400, 10.16mm Width)

Access Time (Max) :

55 ns

Organization :

256KX16

JESD-30 Code :

R-PDSO-G44

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

20

Pin Count :

44