CY62136FV30LL-45BVXIT

Manufacturer :

Infineon Technologies

Product Category :

Memory

Height Seated (Max) :

1mm

Operating Temperature :

-40°C~85°C TA

Memory Interface :

Parallel

Supply Voltage-Max (Vsup) :

3.6V

Surface Mount :

yes

Supply Voltage-Min (Vsup) :

2.2V

Peak Reflow Temperature (Cel) :

260

HTS Code :

8542.32.00.41

Supply Voltage :

3V

RoHS Status :

ROHS3 Compliant

Memory Width :

16

Memory Density :

2097152 bit

Number of Terminations :

48

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

JESD-609 Code :

e1

Supply Current-Max :

0.018mA

Access Time (Max) :

45 ns

Pbfree Code :

yes

Terminal Pitch :

0.75mm

Length :

8mm

I/O Type :

COMMON

Standby Voltage-Min :

1.5V

Width :

6mm

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

30

Base Part Number :

CY62136

Output Characteristics :

3-STATE

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Power Supplies :

2.5/3.3V

Factory Lead Time :

6 Weeks

Terminal Position :

BOTTOM

Number of Functions :

1

Organization :

128KX16

Standby Current-Max :

0.000004A

Memory Type :

Volatile

Memory Size :

2Mb 128K x 16

Mounting Type :

Surface Mount

Published :

2001

Voltage - Supply :

2.2V~3.6V

Write Cycle Time - Word, Page :

45ns

Series :

MoBL®

Memory Format :

SRAM

ECCN Code :

3A991.B.2.A

JESD-30 Code :

R-PBGA-B48

Package / Case :

48-VFBGA