CY62128EV30LL-55ZXE

Manufacturer :

Infineon Technologies

Product Category :

Memory

Published :

2003

Radiation Hardening :

No

Sync/Async :

ASYNCHRONOUS

Access Time (Max) :

55 ns

Operating Temperature :

-40°C~125°C TA

Standby Current-Max :

0.00003A

Memory Format :

SRAM

Supply Voltage-Min (Vsup) :

2.2V

Lead Free :

Lead Free

Supply Voltage-Max (Vsup) :

3.6V

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tube

Package / Case :

32-TFSOP (0.724, 18.40mm Width)

JESD-609 Code :

e3

Base Part Number :

CY62128

Nominal Supply Current :

35mA

Memory Width :

8

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Write Cycle Time - Word, Page :

55ns

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

32

Series :

MoBL®

RoHS Status :

ROHS3 Compliant

Operating Supply Voltage :

3V

Mount :

Surface Mount

Memory Type :

Volatile

Number of Ports :

1

Factory Lead Time :

8 Weeks

Memory Size :

1Mb 128K x 8

Pin Count :

32

Mounting Type :

Surface Mount

Number of Functions :

1

Number of Terminations :

32

Terminal Pitch :

0.5mm

Memory Interface :

Parallel

I/O Type :

COMMON

Density :

1 Mb

Peak Reflow Temperature (Cel) :

260

Word Size :

8B

Voltage - Supply :

2.2V~3.6V

Supply Voltage :

3V

Address Bus Width :

17b

Output Characteristics :

3-STATE