CY62127DV30LL-55ZXI
- Mfr.Part #
- CY62127DV30LL-55ZXI
- Manufacturer
- Infineon Technologies
- Package / Case
- 44-TSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC SRAM 1MBIT PARALLEL 44TSOP II
- Stock
- 34,686
- In Stock :
- 34,686
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Memory
- Operating Supply Voltage :
- 3V
- Write Cycle Time - Word, Page :
- 55ns
- Memory Width :
- 16
- Voltage - Supply :
- 2.2V~3.6V
- Published :
- 2003
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Mounting Type :
- Surface Mount
- Access Time (Max) :
- 55 ns
- JESD-609 Code :
- e4
- Supply Voltage-Max (Vsup) :
- 3.6V
- Series :
- MoBL®
- Base Part Number :
- CY62127
- Number of Terminations :
- 44
- Supply Voltage-Min (Vsup) :
- 2.2V
- I/O Type :
- COMMON
- Terminal Pitch :
- 0.8mm
- Operating Temperature :
- -40°C~85°C TA
- Mount :
- Surface Mount
- Density :
- 1 Mb
- Memory Format :
- SRAM
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Frequency :
- 55GHz
- Number of Functions :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 20
- Sync/Async :
- ASYNCHRONOUS
- Nominal Supply Current :
- 10mA
- Word Size :
- 16b
- Terminal Position :
- Dual
- Number of Pins :
- 44
- Number of Ports :
- 1
- Packaging :
- Tray
- Memory Size :
- 1Mb 64K x 16
- Pbfree Code :
- yes
- Pin Count :
- 44
- Address Bus Width :
- 16b
- Output Characteristics :
- 3-STATE
- Memory Type :
- Volatile
- Memory Interface :
- Parallel
- Package / Case :
- 44-TSOP (0.400, 10.16mm Width)
- Standby Current-Max :
- 0.000003A
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- RoHS Status :
- ROHS3 Compliant
- Supply Voltage :
- 3V
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- CY62127DV30LL-55ZXI

Memory Infineon Technologies CY62127DV30LL-55ZXI Overview
Introducing the Memory Infineon Technologies CY62127DV30LL-55ZXI, a high-performance 1Mbit SRAM chip designed to meet the demands of advanced embedded systems. Manufactured by Infineon Technologies, this SRAM offers a robust parallel interface, encapsulated in a 44TSOP II package for superior durability and minimal footprint. Its design is optimized for high-speed operation, boasting a 55ns access time, making it an excellent choice for applications requiring fast and reliable data storage. The Memory Infineon Technologies CY62127DV30LL-55ZXI is perfect for businesses looking to integrate top-tier memory solutions into their products, enhancing overall system reliability and performance.
CY62127DV30LL-55ZXI Features
This SRAM module comes packed with features designed for high efficiency and performance, including:
- 1Mbit capacity offering ample space for high-performance applications.
- Fast 55ns access time enabling quick read and write operations, crucial for time-sensitive tasks.
- Low-power operation, which reduces energy consumption and extends device life.
- 44TSOP II package that ensures a compact footprint and easy integration into various circuit designs.
CY62127DV30LL-55ZXI Applications
- Automotive Electronics: Utilized in engine control units and infotainment systems to provide fast and reliable data caching.
- Industrial Automation: Helps in managing process control systems where quick access to data is crucial for operational efficiency.
- Telecommunications: Integral in switching systems and network routers for buffer memory, enhancing the speed and reliability of communications.
- Consumer Electronics: Applied in smart home devices and high-performance gaming consoles to enhance user experience through speedy data access.
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