CY62127DV30L-55ZSXE
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- Mfr.Part #
- CY62127DV30L-55ZSXE
- Manufacturer
- Infineon Technologies
- Package / Case
- 44-TSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC SRAM 1MBIT PARALLEL 44TSOP II
- Stock
- 13,077
- In Stock ：
- 13,077
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Memory
- Number of Functions :
- 1
- Standby Voltage-Min :
- 1.5V
- Height Seated (Max) :
- 1.194mm
- Supply Voltage :
- 3V
- HTS Code :
- 8542.32.00.41
- Lead Free :
- Lead Free
- Length :
- 18.415mm
- Operating Temperature :
- -40°C~125°C TA
- Pin Count :
- 44
- Supply Current-Max :
- 0.01mA
- Supply Voltage-Min (Vsup) :
- 2.2V
- Memory Interface :
- Parallel
- Memory Width :
- 16
- Terminal Pitch :
- 0.8mm
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Peak Reflow Temperature (Cel) :
- 260
- Qualification Status :
- Not Qualified
- Base Part Number :
- CY62127
- I/O Type :
- COMMON
- Memory Type :
- Volatile
- Reach Compliance Code :
- Unknown
- Package / Case :
- 44-TSOP (0.400, 10.16mm Width)
- Packaging :
- Tray
- Write Cycle Time - Word, Page :
- 55ns
- JESD-30 Code :
- R-PDSO-G44
- Standby Current-Max :
- 0.00001A
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Surface Mount :
- yes
- Power Supplies :
- 2.5/3.3V
- Organization :
- 64KX16
- Memory Size :
- 1Mb 64K x 16
- Terminal Position :
- Dual
- Memory Density :
- 1048576 bit
- RoHS Status :
- ROHS3 Compliant
- Supply Voltage-Max (Vsup) :
- 3.6V
- Published :
- 2006
- Memory Format :
- SRAM
- Width :
- 10.16mm
- Output Characteristics :
- 3-STATE
- Access Time (Max) :
- 55 ns
- Time@Peak Reflow Temperature-Max (s) :
- 20
- Number of Terminations :
- 44
- Series :
- MoBL®
- JESD-609 Code :
- e4
- Voltage - Supply :
- 2.2V~3.6V
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Datasheets
- CY62127DV30L-55ZSXE
Memory Infineon Technologies CY62127DV30L-55ZSXE Overview
The Memory Infineon Technologies CY62127DV30L-55ZSXE is a high-performance 1Mbit SRAM chip offered in a 44-pin TSOP II package, engineered by Infineon Technologies. This device provides a reliable and fast parallel interface, making it an ideal solution for applications requiring quick data access and high bandwidth. With its robust design and advanced fabrication technology, this SRAM module ensures stability and durability, critical for industrial and commercial use. Its low power consumption and wide operating temperature range enhance its suitability for sophisticated electronic systems, promoting efficiency and reducing operational costs, making it attractive for B2B customers looking to purchase in bulk.
CY62127DV30L-55ZSXE Features
This SRAM device boasts several features that make it a top choice for various applications. It operates with a voltage range of 2.2 to 3.6 volts, which allows for flexible integration into different system architectures. Additionally, the chip's access time of 55 ns provides rapid data retrieval, essential for high-speed operations. Its low power design not only extends battery life in portable devices but also reduces heat generation in high-performance systems, contributing to overall system reliability.
CY62127DV30L-55ZSXE Applications
- Embedded Systems: Utilized in microcontroller-based platforms, the CY62127DV30L-55ZSXE provides fast and reliable data buffering capabilities essential for real-time processing and control.
- Automotive Electronics: Ideal for use in automotive applications due to its robustness and extended temperature range, ensuring performance under harsh environmental conditions.
- Portable Devices: Its low power consumption makes it suitable for battery-operated devices such as handheld scanners and medical instruments, where power efficiency is crucial.
- Networking Hardware: Deployed in routers and switches for packet buffering, the SRAM ensures effective data flow management and high-speed data access required in network communication.
- Industrial Applications: Supports industrial automation systems requiring high-speed, reliable memory for logging and process control.
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