CY62127DV30L-55BVXE

Manufacturer :

Infineon Technologies

Product Category :

Memory

Height Seated (Max) :

1mm

Write Cycle Time - Word, Page :

55ns

Number of Terminations :

48

Terminal Pitch :

0.75mm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Supply Voltage :

3V

Memory Type :

Volatile

Published :

2006

Organization :

64KX16

Surface Mount :

yes

Voltage - Supply :

2.2V~3.6V

Width :

6mm

Number of Functions :

1

Number of Pins :

48

I/O Type :

COMMON

Pin Count :

48

Series :

MoBL®

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Terminal Position :

BOTTOM

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

20

Power Supplies :

2.5/3.3V

JESD-609 Code :

e1

Qualification Status :

Not Qualified

Packaging :

Tray

Supply Current-Max :

0.01mA

Memory Interface :

Parallel

Package / Case :

48-VFBGA

Supply Voltage-Max (Vsup) :

3.6V

Memory Size :

1Mb 64K x 16

Memory Format :

SRAM

Reach Compliance Code :

Unknown

Standby Current-Max :

0.00001A

Memory Width :

16

Access Time (Max) :

55 ns

Output Characteristics :

3-STATE

Standby Voltage-Min :

1.5V

Supply Voltage-Min (Vsup) :

2.2V

Operating Temperature :

-40°C~125°C TA

Length :

8mm

Base Part Number :

CY62127

HTS Code :

8542.32.00.41

Lead Free :

Lead Free