CY62126EV30LL-55ZSXE

Manufacturer :

Infineon Technologies

Product Category :

Memory

Sync/Async :

ASYNCHRONOUS

Packaging :

Tube

Factory Lead Time :

18 Weeks

Number of Terminations :

44

Output Characteristics :

3-STATE

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Standby Current-Max :

0.00003A

I/O Type :

COMMON

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

ECCN Code :

EAR99

Operating Temperature :

-40°C~125°C TA

Density :

1 Mb

RoHS Status :

ROHS3 Compliant

Memory Type :

Volatile

Published :

1998

Memory Interface :

Parallel

Package / Case :

44-TSOP (0.400, 10.16mm Width)

Memory Size :

1Mb 64K x 16

Supply Voltage :

3V

Mount :

Surface Mount

Word Size :

16b

Operating Supply Voltage :

3V

Access Time (Max) :

55 ns

Address Bus Width :

16b

Number of Functions :

1

Supply Voltage-Min (Vsup) :

2.2V

Number of Ports :

1

Pin Count :

44

JESD-609 Code :

e4

Terminal Position :

Dual

Memory Width :

16

Number of Pins :

44

Terminal Pitch :

0.8mm

Series :

MoBL®

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Voltage - Supply :

2.2V~3.6V

Nominal Supply Current :

35mA

Memory Format :

SRAM

Base Part Number :

CY62126

Write Cycle Time - Word, Page :

55ns

Lead Free :

Lead Free

Supply Voltage-Max (Vsup) :

3.6V

Mounting Type :

Surface Mount