CY15E016J-SXET

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Mfr.Part #
CY15E016J-SXET
Manufacturer
Infineon Technologies
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
IC FRAM 16KBIT I2C 1MHZ 8SOIC
Stock
20,770
In Stock :
20,770

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Manufacturer :
Infineon Technologies
Product Category :
Memory
Supply Voltage-Max (Vsup) :
3.6V
Number of Functions :
1
Terminal Position :
Dual
Memory Size :
16Kb 2K x 8
Number of Terminations :
8
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Voltage - Supply :
4.5V~5.5V
Supply Voltage-Min (Vsup) :
3V
Series :
Automotive, AEC-Q100, F-RAM™
Surface Mount :
yes
Terminal Pitch :
1.27mm
Supply Voltage :
3.3V
JESD-30 Code :
R-PDSO-G8
Memory Interface :
I2C
RoHS Status :
ROHS3 Compliant
Memory Density :
16384 bit
Width :
3.8985mm
Packaging :
Tape and Reel (TR)
Length :
4.889mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Memory Width :
8
Memory Type :
Non-Volatile
Operating Temperature :
-40°C~125°C TA
Operating Mode :
SYNCHRONOUS
Factory Lead Time :
6 Weeks
Mounting Type :
Surface Mount
ECCN Code :
EAR99
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Memory Format :
FRAM
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Clock Frequency :
1MHz
Height Seated (Max) :
1.727mm
HTS Code :
8542.32.00.71
Organization :
2KX8
Datasheets
CY15E016J-SXET
Introducing Memory Infineon Technologies CY15E016J-SXET from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:8, Operating Temperature:-40°C~125°C TA, Mounting Type:Surface Mount, Package / Case:8-SOIC (0.154, 3.90mm Width), CY15E016J-SXET pinout, CY15E016J-SXET datasheet PDF, CY15E016J-SXET amp .Beyond Memory Infineon Technologies CY15E016J-SXET ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies CY15E016J-SXET


Memory Infineon Technologies CY15E016J-SXET Overview

The Infineon Technologies CY15E016J-SXET is a cutting-edge FRAM (Ferroelectric Random Access Memory) integrated circuit that promises reliability and high-speed performance for a range of advanced applications. This 16Kbit memory device leverages the fast I2C interface with a commendable speed of up to 1MHz, encapsulated within a compact 8SOIC package. Characterized by low-power operation and fast write speeds, it outperforms traditional non-volatile memories in situations requiring frequent or rapid data changes. The CY15E016J-SXET is designed for applications where data integrity is paramount, ensuring data retention without the need for a backup battery, thus simplifying system design and increasing reliability. With these features, the Memory Infineon Technologies CY15E016J-SXET IC emerges as a robust solution for contemporary data storage challenges in a variety of sectors.

CY15E016J-SXET Features

  • 16Kbit FRAM capacity
  • High-speed I2C interface supporting 1MHz frequency
  • Low-power consumption ideal for battery-powered devices
  • No need for data-refresh, ensuring non-volatile storage stability
  • 8SOIC package for easy integration into circuit designs
  • Endurance of 10^14 read/write cycles for extensive usability
  • Wide operating voltage range of 2.7V to 3.6V

CY15E016J-SXET Applications

  • Wearable Electronics: Utilized for storing user settings and fitness data that requires frequent updates without degrading memory integrity.
  • Industrial Automation: Employed in machine control systems for recording operational logs and machinery states where data retention and fast access is critical.
  • Automotive Electronics: Implemented in vehicle systems for storing configuration and diagnostic codes where durability against harsh environments is needed.
  • Smart Metering: Used in utility meters to record consumption details accurately, offering long-term data reliability even in power-failure scenarios.
  • Internet of Things (IoT) Devices: Integral for IoT nodes that capture and store data, benefitting from FRAM's low-power and high-endurance characteristics.
  • Medical Devices: Applied to store patient data and device configurations that require high-reliability and stability in memory performance.
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