CY14V104NA-BA45XI

Manufacturer :

Infineon Technologies

Product Category :

Memory

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Published :

2007

Factory Lead Time :

10 Weeks

Terminal Position :

BOTTOM

Word Size :

16b

Package / Case :

48-TFBGA

Access Time (Max) :

45 ns

Pin Count :

48

JESD-609 Code :

e1

Peak Reflow Temperature (Cel) :

260

Number of Functions :

1

Voltage - Supply :

2.7V~3.6V

Memory Format :

NVSRAM

Supply Voltage-Max (Vsup) :

3.6V

Length :

10mm

Operating Temperature :

-40°C~85°C TA

Mounting Type :

Surface Mount

Terminal Pitch :

0.75mm

Memory Size :

4Mb 256K x 16

Data Bus Width :

16b

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ASYNCHRONOUS

Density :

4 Mb

Memory Width :

16

Operating Supply Voltage :

3.3V

Supply Voltage-Min (Vsup) :

3V

Qualification Status :

Not Qualified

Memory Interface :

Parallel

HTS Code :

8542.32.00.41

RoHS Status :

ROHS3 Compliant

Standby Current-Max :

0.008A

Nominal Supply Current :

52mA

Mount :

Surface Mount

Organization :

256KX16

Memory Type :

Non-Volatile

Number of Terminations :

48

Supply Voltage :

3.3V

ECCN Code :

3A991.B.2.A

Write Cycle Time - Word, Page :

45ns

Number of Pins :

48

Height Seated (Max) :

1.2mm

Packaging :

Tape and Reel (TR)