CY14V101NA-BA25XI
- Mfr.Part #
- CY14V101NA-BA25XI
- Manufacturer
- Infineon Technologies
- Package / Case
- 48-TFBGA
- Datasheet
- Download
- Description
- IC NVSRAM 1MBIT PARALLEL 48FBGA
- Stock
- 12
- In Stock :
- 12
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Memory
- Standby Current-Max :
- 0.008A
- Terminal Position :
- BOTTOM
- Memory Width :
- 16
- Nominal Supply Current :
- 70mA
- Supply Voltage-Min (Vsup) :
- 3V
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Radiation Hardening :
- No
- Contact Plating :
- Copper, Silver, Tin
- Package / Case :
- 48-TFBGA
- Packaging :
- Tray
- Peak Reflow Temperature (Cel) :
- 260
- HTS Code :
- 8542.32.00.41
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Terminations :
- 48
- Memory Type :
- Non-Volatile
- Mounting Type :
- Surface Mount
- Memory Size :
- 1Mb 64K x 16
- Word Size :
- 16b
- Number of Pins :
- 48
- Write Cycle Time - Word, Page :
- 25ns
- Memory Format :
- NVSRAM
- JESD-609 Code :
- e1
- Density :
- 1 Mb
- Base Part Number :
- CY14V101
- Number of Functions :
- 1
- Factory Lead Time :
- 16 Weeks
- Supply Voltage :
- 3.3V
- Access Time (Max) :
- 25 ns
- Pin Count :
- 48
- Supply Voltage-Max (Vsup) :
- 3.6V
- Height Seated (Max) :
- 1.2mm
- Voltage - Supply :
- 2.7V~3.6V
- ECCN Code :
- EAR99
- Organization :
- 64KX16
- Operating Supply Voltage :
- 3.3V
- Data Bus Width :
- 16b
- Terminal Pitch :
- 0.75mm
- Operating Temperature :
- -40°C~85°C TA
- Length :
- 10mm
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Memory Interface :
- Parallel
- Mount :
- Surface Mount
- Published :
- 2009
- Datasheets
- CY14V101NA-BA25XI

Memory Infineon Technologies CY14V101NA-BA25XI Overview
Introducing the cutting-edge IC NVSRAM 1MBIT PARALLEL 48FBGA, meticulously crafted by Infineon Technologies, a leading name in the realm of integrated circuits. This state-of-the-art memory solution represents the pinnacle of innovation and reliability in the industry. Designed to meet the demands of modern electronic systems, it offers unparalleled performance and stability, ensuring seamless operation in diverse applications.
With its advanced parallel architecture and 1MBIT capacity, this IC NVSRAM empowers businesses with robust data storage capabilities, facilitating efficient data handling and processing. Its compact 48FBGA form factor enables effortless integration into various electronic devices, optimizing space utilization without compromising performance. Backed by Infineon Technologies' renowned quality assurance measures, this memory solution guarantees exceptional endurance and longevity, making it the preferred choice for critical applications.
Experience unparalleled performance and reliability with the Memory Infineon Technologies CY14V101NA-BA25XI, the epitome of excellence in memory technology.
CY14V101NA-BA25XI Features
- 1MBIT capacity for ample data storage
- Parallel architecture for enhanced data processing speed
- Compact 48FBGA form factor for easy integration
- High endurance for reliable operation
- Exceptional stability in diverse environmental conditions
- Optimized for power efficiency
- Industry-leading quality assurance by Infineon Technologies
CY14V101NA-BA25XI Applications
- Industrial Automation: The CY14V101NA-BA25XI memory module finds application in industrial automation systems, where it serves as a reliable data storage solution for controlling processes and managing production schedules. Its high endurance and stability ensure uninterrupted operation in demanding industrial environments.
- Telecommunications Infrastructure: In telecommunications infrastructure, this memory solution is utilized for storing configuration data and logs in networking equipment and base stations. Its compact form factor enables seamless integration into space-constrained installations, while its high-speed parallel architecture facilitates rapid data access.
- Medical Devices: Within medical devices such as patient monitors and diagnostic equipment, the CY14V101NA-BA25XI memory module plays a vital role in storing critical patient data and device settings. Its exceptional reliability and power efficiency make it an ideal choice for medical applications where accuracy and dependability are paramount.
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