CY14B256LA-SZ25XIT
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- Mfr.Part #
- CY14B256LA-SZ25XIT
- Manufacturer
- Infineon Technologies
- Package / Case
- 32-SOIC (0.295, 7.50mm Width)
- Datasheet
- Download
- Description
- IC NVSRAM 256KBIT PAR 32SOIC
- Stock
- 4,779
- In Stock ：
- 4,779
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Memory
- Height Seated (Max) :
- 2.54mm
- Length :
- 20.726mm
- Supply Voltage :
- 3V
- Access Time (Max) :
- 25 ns
- ECCN Code :
- EAR99
- Memory Size :
- 256Kb 32K x 8
- Memory Type :
- Non-Volatile
- Voltage - Supply :
- 2.7V~3.6V
- Operating Temperature :
- -40°C~85°C TA
- Base Part Number :
- CY14*256
- Terminal Pitch :
- 1.27mm
- Write Cycle Time - Word, Page :
- 25ns
- JESD-609 Code :
- e3
- Pin Count :
- 32
- Number of Terminations :
- 32
- Density :
- 256 kb
- Operating Mode :
- ASYNCHRONOUS
- Terminal Finish :
- Matte Tin (Sn)
- Memory Format :
- NVSRAM
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 32-SOIC (0.295, 7.50mm Width)
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Standby Current-Max :
- 0.005A
- RoHS Status :
- ROHS3 Compliant
- Supply Voltage-Max (Vsup) :
- 3.6V
- Qualification Status :
- Not Qualified
- Operating Supply Voltage :
- 3V
- Factory Lead Time :
- 13 Weeks
- Published :
- 2008
- Memory Interface :
- Parallel
- Data Bus Width :
- 8B
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Pins :
- 32
- Supply Voltage-Min (Vsup) :
- 2.7V
- Number of Functions :
- 1
- Contact Plating :
- Gold, Tin
- Memory Width :
- 8
- Word Size :
- 8B
- Nominal Supply Current :
- 70mA
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Datasheets
- CY14B256LA-SZ25XIT
Memory Infineon Technologies CY14B256LA-SZ25XIT Overview
The Memory Infineon Technologies CY14B256LA-SZ25XIT is an essential component designed for advanced data storage solutions, boasting a non-volatile SRAM (NVSRAM) capacity of 256 Kbit. Packaged in a 32-SOIC format, this IC offers reliable performance and superior data retention capabilities, making it ideal for applications requiring frequent or rapid access to large amounts of data. The device ensures data integrity through power transitions, leveraging Infineon's cutting-edge technology to provide a robust storage solution. With its integration of non-volatile elements, the CY14B256LA-SZ25XIT guarantees preservation of critical data without the need for an external battery, significantly simplifying system design and increasing reliability.
CY14B256LA-SZ25XIT Features
This integrated circuit is engineered with several key features that stand out in the semiconductor industry:
- High Density Storage: 256 Kbit NVSRAM enables considerable data storage in a compact form factor.
- Power Management: Automatic data transfer between SRAM and non-volatile elements ensures data integrity during power loss.
- Speed: Fast access times comparable to standard SRAM, allowing for rapid data retrieval and storage.
- Durability: High endurance and reliability with Infineon's robust manufacturing processes.
- Temperature Range: Operates effectively across a wide temperature range, suitable for diverse operating environments.
CY14B256LA-SZ25XIT Applications
- Industrial Automation: Utilized in controlling systems that require frequent and rapid access to data for real-time process management.
- Networking Equipment: Applied in network hardware where quick data buffering is essential to manage traffic and router configurations effectively.
- Automotive Applications: Ideal for use in automotive electronics that depend on durable, reliable non-volatile memory to store critical system parameters.
- Data Logging: Employed in devices requiring high-density, fast-access memory for extensive data logging activities.
- Medical Devices: Suitable for medical diagnostic equipment where precision and data integrity are crucial for accurate results.
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