CY14B256L-SZ45XI
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- Mfr.Part #
- CY14B256L-SZ45XI
- Manufacturer
- Infineon Technologies
- Package / Case
- 32-SOIC (0.295, 7.50mm Width)
- Datasheet
- Download
- Description
- IC NVSRAM 256KBIT PAR 32SOIC
- Stock
- 30,745
- In Stock ：
- 30,745
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Memory
- Supply Voltage-Max (Vsup) :
- 3.6V
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 32
- Packaging :
- Tube
- Package / Case :
- 32-SOIC (0.295, 7.50mm Width)
- Memory Size :
- 256Kb 32K x 8
- Number of Pins :
- 32
- Published :
- 2008
- Operating Mode :
- ASYNCHRONOUS
- REACH SVHC :
- No SVHC
- Base Part Number :
- CY14*256
- Memory Interface :
- Parallel
- Word Size :
- 8B
- Density :
- 256 kb
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Length :
- 20.726mm
- Peak Reflow Temperature (Cel) :
- 260
- Nominal Supply Current :
- 55mA
- Termination :
- SMD/SMT
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 20
- Write Cycle Time - Word, Page :
- 45ns
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- Unknown
- Terminal Position :
- Dual
- Height Seated (Max) :
- 2.54mm
- Voltage - Supply :
- 2.7V~3.6V
- Standby Current-Max :
- 0.003A
- Data Bus Width :
- 8B
- Access Time (Max) :
- 45 ns
- Memory Format :
- NVSRAM
- Memory Width :
- 8
- RoHS Status :
- ROHS3 Compliant
- Number of Functions :
- 1
- Memory Type :
- Non-Volatile
- Operating Temperature :
- -40°C~85°C TA
- Operating Supply Voltage :
- 3.3V
- Terminal Pitch :
- 1.27mm
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Terminal Finish :
- Matte Tin (Sn)
- Pin Count :
- 32
- Supply Voltage :
- 3V
- Supply Voltage-Min (Vsup) :
- 2.7V
- Datasheets
- CY14B256L-SZ45XI
Memory Infineon Technologies CY14B256L-SZ45XI Overview
The Memory Infineon Technologies CY14B256L-SZ45XI is a cutting-edge non-volatile static RAM (NVSRAM) device, offering a substantial 256 Kbit of storage. This product by Infineon Technologies is encapsulated in a compact 32-SOIC package, making it ideal for sophisticated applications where space and power efficiency are critical. It combines the access speed of SRAM with the non-volatility of EEPROM, ensuring data retention without the need for an external battery. This feature makes it exceptionally reliable in systems where data integrity and instant access are paramount, thus appealing to B2B customers looking for robust, long-term memory solutions.
CY14B256L-SZ45XI Features
This IC NVSRAM features parallel interface capabilities, enhancing its operational efficiency and ease of integration into existing architectures. Key features include high data retention capabilities, fast access times comparable to standard SRAMs, and a low power design. The device operates over a wide industrial temperature range, ensuring reliability and performance under extreme conditions.
CY14B256L-SZ45XI Applications
- Industrial Automation: Utilized in controlling and monitoring equipment, where its fast access time and data integrity are crucial for real-time process control.
- Data Logging Systems: Ideal for use in environments where frequent power loss may occur, ensuring data preservation without constant power supply.
- Medical Devices: Supports critical medical applications requiring instant access to data and high reliability in data storage, such as in diagnostic and monitoring systems.
- Telecommunications: Employed in network infrastructure to maintain essential configuration data, facilitating quick recovery and stabilization after power disruptions.
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