CY14B104NA-BA25XIT
- Mfr.Part #
- CY14B104NA-BA25XIT
- Manufacturer
- Infineon Technologies
- Package / Case
- 48-TFBGA
- Datasheet
- Download
- Description
- IC NVSRAM 4MBIT PARALLEL 48FBGA
- Stock
- 25,357
- In Stock :
- 25,357
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Memory
- Contact Plating :
- Copper, Silver, Tin
- Organization :
- 256KX16
- Data Bus Width :
- 16b
- Qualification Status :
- Not Qualified
- Length :
- 10mm
- Pin Count :
- 48
- Memory Size :
- 4Mb 256K x 16
- Terminal Pitch :
- 0.75mm
- Word Size :
- 16b
- Voltage - Supply :
- 2.7V~3.6V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 48
- Density :
- 4 Mb
- Mount :
- Surface Mount
- Nominal Supply Current :
- 70mA
- Operating Mode :
- ASYNCHRONOUS
- Operating Temperature :
- -40°C~85°C TA
- Operating Supply Voltage :
- 3V
- Height Seated (Max) :
- 1.2mm
- Number of Pins :
- 48
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e1
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Memory Width :
- 16
- ECCN Code :
- 3A991.B.2.A
- Packaging :
- Tape and Reel (TR)
- Memory Interface :
- Parallel
- Memory Type :
- Non-Volatile
- Supply Voltage-Max (Vsup) :
- 3.6V
- Factory Lead Time :
- 12 Weeks
- Supply Voltage-Min (Vsup) :
- 2.7V
- Published :
- 2011
- Package / Case :
- 48-TFBGA
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- BOTTOM
- Supply Voltage :
- 3V
- Standby Current-Max :
- 0.005A
- HTS Code :
- 8542.32.00.41
- Access Time (Max) :
- 25 ns
- Base Part Number :
- CY14B104
- Number of Functions :
- 1
- Write Cycle Time - Word, Page :
- 25ns
- Memory Format :
- NVSRAM
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Datasheets
- CY14B104NA-BA25XIT

Memory Infineon Technologies CY14B104NA-BA25XIT Overview
The Memory Infineon Technologies CY14B104NA-BA25XIT is a cutting-edge Integrated Circuit (IC) designed by Infineon Technologies, featuring a robust 4Mbit Non-Volatile Static Random Access Memory (NVSRAM). Packaged in a compact 48-pin Fine Pitch Ball Grid Array (FBGA), this component ensures high-speed data access and retention stability. It is specifically engineered for applications requiring frequent and rapid access to large volumes of data with the assurance of non-volatile storage, making it a vital choice for critical data logging and real-time processing systems. This product is an excellent example of high-performance memory solutions facilitating advanced industrial capabilities.
CY14B104NA-BA25XIT Features
The CY14B104NA-BA25XIT from Infineon Technologies boasts several standout features. It provides a large memory capacity of 4MBits while operating in a parallel interface, ensuring rapid data transfer and minimal latency. The durability and reliability are enhanced by its design to withstand industrial temperature ranges, making it suitable for harsh environments. Additionally, its low power consumption and high data retention capability extend its usability in battery-powered and backup memory applications, ensuring data safety even in power loss scenarios.
CY14B104NA-BA25XIT Applications
- Industrial Automation: Utilized in PLCs and other control systems to store configurations and process data quickly and securely.
- Data Logging: Essential in environments where high-speed data capture is critical, such as in telemetry and research facilities.
- Medical Devices: Applied in critical medical monitoring equipment where reliable and instant data retrieval is crucial for patient care.
- Automotive Systems: Helps in fault logging and real-time sensor data storage in advanced driver-assistance systems (ADAS).
- Telecommunications: Used in network equipment for buffering data and managing large-scale system configurations.
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