CY14B104NA-BA25IT

Manufacturer :

Infineon Technologies

Product Category :

Memory

Memory Interface :

Parallel

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ASYNCHRONOUS

Factory Lead Time :

11 Weeks

Terminal Position :

BOTTOM

Memory Size :

4Mb 256K x 16

Access Time (Max) :

25 ns

HTS Code :

8542.32.00.41

RoHS Status :

Non-RoHS Compliant

Supply Voltage-Max (Vsup) :

3.6V

Surface Mount :

yes

Organization :

256KX16

Qualification Status :

Not Qualified

Operating Temperature :

-40°C~85°C TA

Package / Case :

48-TFBGA

Mounting Type :

Surface Mount

Memory Format :

NVSRAM

Number of Functions :

1

JESD-609 Code :

e1

Memory Width :

16

JESD-30 Code :

R-PBGA-B48

ECCN Code :

3A991.B.2.A

Memory Density :

4194304 bit

Published :

2011

Height Seated (Max) :

1.2mm

Supply Voltage :

3V

Power Supplies :

3/3.3V

Peak Reflow Temperature (Cel) :

260

Supply Voltage-Min (Vsup) :

2.7V

Standby Current-Max :

0.005A

Length :

10mm

Supply Current-Max :

0.07mA

Voltage - Supply :

2.7V~3.6V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Packaging :

Tape and Reel (TR)

Write Cycle Time - Word, Page :

25ns

Base Part Number :

CY14B104

Width :

6mm

Terminal Pitch :

0.75mm

Number of Terminations :

48

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Type :

Non-Volatile