CY14B104NA-BA20XI

Manufacturer :

Infineon Technologies

Product Category :

Memory

Memory Format :

NVSRAM

Qualification Status :

Not Qualified

Density :

4 Mb

Number of Pins :

48

Terminal Pitch :

0.75mm

Voltage - Supply :

2.7V~3.6V

Operating Temperature :

-40°C~85°C TA

Data Bus Width :

16b

Word Size :

16b

Mounting Type :

Surface Mount

Memory Type :

Non-Volatile

Supply Voltage-Max (Vsup) :

3.6V

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Memory Width :

16

Organization :

256KX16

Length :

10mm

Pin Count :

48

Memory Interface :

Parallel

Write Cycle Time - Word, Page :

20ns

JESD-609 Code :

e1

Peak Reflow Temperature (Cel) :

260

Logic Function :

Clock

Supply Voltage :

3V

Nominal Supply Current :

70mA

Supply Voltage-Min (Vsup) :

2.7V

Published :

2006

Packaging :

Tray

Operating Supply Voltage :

3V

Standby Current-Max :

0.005A

Base Part Number :

CY14B104

Access Time (Max) :

20 ns

Height Seated (Max) :

1.2mm

Time Format :

HH:MM:SS

RoHS Status :

ROHS3 Compliant

Terminal Position :

BOTTOM

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Memory Size :

4Mb 256K x 16

HTS Code :

8542.32.00.41

Contact Plating :

Copper, Silver, Tin

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Terminations :

48

Factory Lead Time :

16 Weeks

Operating Mode :

ASYNCHRONOUS

ECCN Code :

3A991.B.2.B

Package / Case :

48-TFBGA

Number of Functions :

1