CY14B104LA-BA25XI

Manufacturer :

Infineon Technologies

Product Category :

Memory

Memory Interface :

Parallel

Factory Lead Time :

16 Weeks

Word Size :

8B

RoHS Status :

ROHS3 Compliant

Supply Voltage-Max (Vsup) :

3.6V

Published :

2011

Voltage - Supply :

2.7V~3.6V

Memory Type :

Non-Volatile

Organization :

512KX8

ECCN Code :

3A991.B.2.A

Data Bus Width :

8B

Base Part Number :

CY14B104

Height Seated (Max) :

1.2mm

Operating Mode :

ASYNCHRONOUS

Qualification Status :

Not Qualified

Density :

4 Mb

JESD-609 Code :

e1

Number of Pins :

48

Peak Reflow Temperature (Cel) :

260

Number of Functions :

1

Supply Voltage-Min (Vsup) :

2.7V

Time@Peak Reflow Temperature-Max (s) :

30

Write Cycle Time - Word, Page :

25ns

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Memory Format :

NVSRAM

Operating Temperature :

-40°C~85°C TA

HTS Code :

8542.32.00.41

Pin Count :

48

Operating Supply Voltage :

3V

Number of Terminations :

48

Length :

10mm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Package / Case :

48-TFBGA

Memory Width :

8

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Nominal Supply Current :

70mA

Supply Voltage :

3V

Access Time (Max) :

25 ns

Terminal Pitch :

0.75mm

Contact Plating :

Copper, Silver, Tin

Terminal Position :

BOTTOM

Memory Size :

4Mb 512K x 8

Standby Current-Max :

0.005A